InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition

T. S. Ko*, T. C. Wang, R. C. Gao, Y. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang, H. G. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The authors have used metal organic chemical vapor deposition to grow InGaNGaN multiple quantum well (MQW) nanostripes on trapezoidally patterned c -plane sapphire substrates. Transmission electron microscopy (TEM) images clearly revealed that the MQWs grew not only on the top faces of the trapezoids but also on both lateral side facets along the [0001] direction defined by the selected area electron diffraction pattern. Meanwhile, dislocations that stretched from the interfaces between the GaN and the substrates did not pass through the MQWs in the TEM observation. Microphotoluminescence measurements verified that the luminescence efficiency from a single nanostripe was enhanced by up to fivefold relative to those of regular thin film MQW structures. Observation of the cathodoluminescence identified the areas of light emission and confirmed that enhanced emission occurred from the nanostripes.

Original languageEnglish
Article number013110
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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