InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition

T. S. Ko, T. C. Wang, R. C. Gao, Ya-Ju Lee, T. C. Lu, H. C. Kuo, S. C. Wang, H. G. Chen

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    Abstract

    The authors have used metal organic chemical vapor deposition to grow InGaNGaN multiple quantum well (MQW) nanostripes on trapezoidally patterned c -plane sapphire substrates. Transmission electron microscopy (TEM) images clearly revealed that the MQWs grew not only on the top faces of the trapezoids but also on both lateral side facets along the [0001] direction defined by the selected area electron diffraction pattern. Meanwhile, dislocations that stretched from the interfaces between the GaN and the substrates did not pass through the MQWs in the TEM observation. Microphotoluminescence measurements verified that the luminescence efficiency from a single nanostripe was enhanced by up to fivefold relative to those of regular thin film MQW structures. Observation of the cathodoluminescence identified the areas of light emission and confirmed that enhanced emission occurred from the nanostripes.

    Original languageEnglish
    Article number013110
    JournalApplied Physics Letters
    Volume90
    Issue number1
    DOIs
    Publication statusPublished - 2007 Jan 15

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Ko, T. S., Wang, T. C., Gao, R. C., Lee, Y-J., Lu, T. C., Kuo, H. C., Wang, S. C., & Chen, H. G. (2007). InGaN/GaN nanostripe grown on pattern sapphire by metal organic chemical vapor deposition. Applied Physics Letters, 90(1), [013110]. https://doi.org/10.1063/1.2430487