Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)

Devki N. Talwar, Tzuen Rong Yang, Hao Hsiung Lin, Zhe Chuan Feng

Research output: Contribution to journalArticle

Abstract

Vibrational spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001) alloys are obtained using a Fourier-transform infrared (IR) spectroscopy. A triply degenerate NAs local vibrational mode of Td-symmetry is observed near 438 cm -1 corresponding to the In-N bond energy. The analysis of composition dependent infrared reflectivity spectra in InNAs has predicted a two-phonon-mode behavior. In In(Ga)-rich GaInNAs alloys the observed splitting of the NAs local mode into a doublet for the NAs-Ga 1(In1)In3(Ga3) pair-defect of C 3v-symmetry is consistent with our simulated results based on a sophisticated Green's function theory.

Original languageEnglish
Article number052110
JournalApplied Physics Letters
Volume102
Issue number5
DOIs
Publication statusPublished - 2013 Feb 4

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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