INIS
layers
100%
substrates
100%
sapphire
100%
gallium nitrides
100%
epitaxy
100%
silicon
100%
films
57%
spectra
57%
surfaces
28%
interfaces
28%
carriers
28%
polycrystals
28%
concentration
14%
comparative evaluations
14%
correlations
14%
microstructure
14%
variations
14%
processing
14%
mobility
14%
thickness
14%
interference
14%
scattering
14%
incidents
14%
roughness
14%
semiconductor materials
14%
damping
14%
transfer matrix method
14%
reflectance (spectral)
14%
Material Science
Sapphire
100%
Film
100%
Silicon
100%
Epilayers
100%
Epitaxial Film
100%
Film Thickness
33%
Carrier Concentration
33%
Carrier Mobility
33%
Theoretical Calculation
33%
Surface Roughness
33%
Surface (Surface Science)
33%
Engineering
Sapphire Substrate
100%
Silicon Substrate
100%
Reflectance
100%
Epitaxial Film
100%
Reflectance Spectrum
66%
Polycrystalline
33%
Experimental Result
16%
Incident Angle
16%
Spectral Characteristic
16%
Destructive Method
16%
Interface Layer
16%
Carrier Mobility
16%
Carrier Concentration
16%
Transfer matrix method
16%
Physics
Reflectance
100%
Polycrystalline
22%
Transfer-Matrix Method
11%
Film Thickness
11%
Surface Roughness
11%
Spectral Reflectance
11%