Infrared proximity sensor using organic light-emitting diode with quantum dots converter

En Chen Chen, Han Cheng Yeh, Yu Chiang Chao, Hsin Fei Meng*, Hsiao Wen Zan, Yun Chi Liang, Chin Ping Huang, Teng Ming Chen, Chih Feng Wang, Chu Chen Chueh, Wen Chang Chen, Sheng Fu Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

An efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2, 3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD surrounded by four PLED on its four sides. The active areas of the five devices are all 1 cm by 1 cm and they are on the same plane. Infrared proximity sensor with photo-current over 300 nA at 10 cm object distance is achieved by detecting the reflected infrared signal.

Original languageEnglish
Pages (from-to)2312-2318
Number of pages7
JournalOrganic Electronics
Volume13
Issue number11
DOIs
Publication statusPublished - 2012 Nov
Externally publishedYes

Keywords

  • Infrared proximity sensor
  • PLED
  • Quantum dots

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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