Infrared proximity sensor using organic light-emitting diode with quantum dots converter

En Chen Chen; Han Cheng Yeh; Yu Chiang Chao; Hsin Fei Meng; Hsiao Wen Zan; Yun Chi Liang; Chin Ping Huang; Teng Ming Chen; Chih Feng Wang; Chu Chen Chueh; Wen Chang Chen; Sheng Fu Horng

doi:10.1016/j.orgel.2012.05.010

Infrared proximity sensor using organic light-emitting diode with quantum dots converter

En Chen Chen, Han Cheng Yeh, Yu Chiang Chao, Hsin Fei Meng^*, Hsiao Wen Zan, Yun Chi Liang, Chin Ping Huang, Teng Ming Chen, Chih Feng Wang, Chu Chen Chueh, Wen Chang Chen, Sheng Fu Horng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2, 3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD surrounded by four PLED on its four sides. The active areas of the five devices are all 1 cm by 1 cm and they are on the same plane. Infrared proximity sensor with photo-current over 300 nA at 10 cm object distance is achieved by detecting the reflected infrared signal.

Original language	English
Pages (from-to)	2312-2318
Number of pages	7
Journal	Organic Electronics
Volume	13
Issue number	11
DOIs	https://doi.org/10.1016/j.orgel.2012.05.010
Publication status	Published - 2012 Nov
Externally published	Yes

Keywords

Infrared proximity sensor
PLED
Quantum dots

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2012.05.010

Cite this

@article{2870293468cf4536bfb311024dc38600,

title = "Infrared proximity sensor using organic light-emitting diode with quantum dots converter",

abstract = "An efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2, 3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD surrounded by four PLED on its four sides. The active areas of the five devices are all 1 cm by 1 cm and they are on the same plane. Infrared proximity sensor with photo-current over 300 nA at 10 cm object distance is achieved by detecting the reflected infrared signal.",

keywords = "Infrared proximity sensor, PLED, Quantum dots",

author = "Chen, {En Chen} and Yeh, {Han Cheng} and Chao, {Yu Chiang} and Meng, {Hsin Fei} and Zan, {Hsiao Wen} and Liang, {Yun Chi} and Huang, {Chin Ping} and Chen, {Teng Ming} and Wang, {Chih Feng} and Chueh, {Chu Chen} and Chen, {Wen Chang} and Horng, {Sheng Fu}",

note = "Funding Information: This work is supported by the National Science Council of Taiwan under Contract No. NSC99-2628-M-009-001 and No. NSC98-2113-M-009-005-MY3. HFM thanks R. Yen and G. Walze at Bayer for fruitful discussions.",

year = "2012",

month = nov,

doi = "10.1016/j.orgel.2012.05.010",

language = "English",

volume = "13",

pages = "2312--2318",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

publisher = "Elsevier",

number = "11",

}

TY - JOUR

T1 - Infrared proximity sensor using organic light-emitting diode with quantum dots converter

AU - Chen, En Chen

AU - Yeh, Han Cheng

AU - Chao, Yu Chiang

AU - Meng, Hsin Fei

AU - Zan, Hsiao Wen

AU - Liang, Yun Chi

AU - Huang, Chin Ping

AU - Chen, Teng Ming

AU - Wang, Chih Feng

AU - Chueh, Chu Chen

AU - Chen, Wen Chang

AU - Horng, Sheng Fu

N1 - Funding Information: This work is supported by the National Science Council of Taiwan under Contract No. NSC99-2628-M-009-001 and No. NSC98-2113-M-009-005-MY3. HFM thanks R. Yen and G. Walze at Bayer for fruitful discussions.

PY - 2012/11

Y1 - 2012/11

N2 - An efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2, 3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD surrounded by four PLED on its four sides. The active areas of the five devices are all 1 cm by 1 cm and they are on the same plane. Infrared proximity sensor with photo-current over 300 nA at 10 cm object distance is achieved by detecting the reflected infrared signal.

AB - An efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2, 3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD surrounded by four PLED on its four sides. The active areas of the five devices are all 1 cm by 1 cm and they are on the same plane. Infrared proximity sensor with photo-current over 300 nA at 10 cm object distance is achieved by detecting the reflected infrared signal.

KW - Infrared proximity sensor

KW - PLED

KW - Quantum dots

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DO - 10.1016/j.orgel.2012.05.010

M3 - Article

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SN - 1566-1199

VL - 13

SP - 2312

EP - 2318

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

IS - 11

ER -

Infrared proximity sensor using organic light-emitting diode with quantum dots converter

Abstract

Keywords

ASJC Scopus subject areas

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