Infrared proximity sensor using organic light-emitting diode with quantum dots converter

En Chen Chen, Han Cheng Yeh, Yu Chiang Chao, Hsin Fei Meng, Hsiao Wen Zan, Yun Chi Liang, Chin Ping Huang, Teng Ming Chen, Chih Feng Wang, Chu Chen Chueh, Wen Chang Chen, Sheng Fu Horng

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Abstract

    An efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2, 3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD surrounded by four PLED on its four sides. The active areas of the five devices are all 1 cm by 1 cm and they are on the same plane. Infrared proximity sensor with photo-current over 300 nA at 10 cm object distance is achieved by detecting the reflected infrared signal.

    Original languageEnglish
    Pages (from-to)2312-2318
    Number of pages7
    JournalOrganic Electronics
    Volume13
    Issue number11
    DOIs
    Publication statusPublished - 2012 Nov

    Keywords

    • Infrared proximity sensor
    • PLED
    • Quantum dots

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Biomaterials
    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Chemistry
    • Electrical and Electronic Engineering

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