Infrared electroluminescence from metal-oxide-semiconductor structures on silicon

Ching Fuh Lin, C. W. Liu, Miin Jang Chen, M. H. Lee, I. C. Lin

Research output: Contribution to journalReview article

6 Citations (Scopus)

Abstract

Room temperature electroluminescence from metal-oxide-semiconductor structures on silicon is observed. The thin oxide is grown by rapid thermal oxidation. With the metal negatively biased, luminescence can be observed. The emission is voltage dependent. For an applied voltage below 5 V, the emission occurs around 1150 nm, approximately corresponding to the Si bandgap energy. For a larger applied voltage, the emission shifts to wavelengths much longer than 1150 nm. The physical reason for the electroluminescence at bandgap energy is attributed to disorder near the Si-SiO2 interface, while the electroluminescence at longer wavelengths could be possibly caused by the c-c or v-v radiative transition.

Original languageEnglish
Pages (from-to)L205-L210
JournalJournal of Physics Condensed Matter
Volume12
Issue number11
DOIs
Publication statusPublished - 2000 Dec 1

Fingerprint

Semiconductors
Electroluminescence
Silicon
metal oxide semiconductors
electroluminescence
Oxides
Metals
Infrared radiation
Electric potential
Energy gap
electric potential
silicon
Luminescence
Wavelength
Hot Temperature
wavelengths
Temperature
disorders
luminescence
Oxidation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Infrared electroluminescence from metal-oxide-semiconductor structures on silicon. / Lin, Ching Fuh; Liu, C. W.; Chen, Miin Jang; Lee, M. H.; Lin, I. C.

In: Journal of Physics Condensed Matter, Vol. 12, No. 11, 01.12.2000, p. L205-L210.

Research output: Contribution to journalReview article

Lin, Ching Fuh ; Liu, C. W. ; Chen, Miin Jang ; Lee, M. H. ; Lin, I. C. / Infrared electroluminescence from metal-oxide-semiconductor structures on silicon. In: Journal of Physics Condensed Matter. 2000 ; Vol. 12, No. 11. pp. L205-L210.
@article{41cb3c046394439194eba28dd821d1e6,
title = "Infrared electroluminescence from metal-oxide-semiconductor structures on silicon",
abstract = "Room temperature electroluminescence from metal-oxide-semiconductor structures on silicon is observed. The thin oxide is grown by rapid thermal oxidation. With the metal negatively biased, luminescence can be observed. The emission is voltage dependent. For an applied voltage below 5 V, the emission occurs around 1150 nm, approximately corresponding to the Si bandgap energy. For a larger applied voltage, the emission shifts to wavelengths much longer than 1150 nm. The physical reason for the electroluminescence at bandgap energy is attributed to disorder near the Si-SiO2 interface, while the electroluminescence at longer wavelengths could be possibly caused by the c-c or v-v radiative transition.",
author = "Lin, {Ching Fuh} and Liu, {C. W.} and Chen, {Miin Jang} and Lee, {M. H.} and Lin, {I. C.}",
year = "2000",
month = "12",
day = "1",
doi = "10.1088/0953-8984/12/11/101",
language = "English",
volume = "12",
pages = "L205--L210",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "11",

}

TY - JOUR

T1 - Infrared electroluminescence from metal-oxide-semiconductor structures on silicon

AU - Lin, Ching Fuh

AU - Liu, C. W.

AU - Chen, Miin Jang

AU - Lee, M. H.

AU - Lin, I. C.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Room temperature electroluminescence from metal-oxide-semiconductor structures on silicon is observed. The thin oxide is grown by rapid thermal oxidation. With the metal negatively biased, luminescence can be observed. The emission is voltage dependent. For an applied voltage below 5 V, the emission occurs around 1150 nm, approximately corresponding to the Si bandgap energy. For a larger applied voltage, the emission shifts to wavelengths much longer than 1150 nm. The physical reason for the electroluminescence at bandgap energy is attributed to disorder near the Si-SiO2 interface, while the electroluminescence at longer wavelengths could be possibly caused by the c-c or v-v radiative transition.

AB - Room temperature electroluminescence from metal-oxide-semiconductor structures on silicon is observed. The thin oxide is grown by rapid thermal oxidation. With the metal negatively biased, luminescence can be observed. The emission is voltage dependent. For an applied voltage below 5 V, the emission occurs around 1150 nm, approximately corresponding to the Si bandgap energy. For a larger applied voltage, the emission shifts to wavelengths much longer than 1150 nm. The physical reason for the electroluminescence at bandgap energy is attributed to disorder near the Si-SiO2 interface, while the electroluminescence at longer wavelengths could be possibly caused by the c-c or v-v radiative transition.

UR - http://www.scopus.com/inward/record.url?scp=0009728472&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0009728472&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/12/11/101

DO - 10.1088/0953-8984/12/11/101

M3 - Review article

AN - SCOPUS:0009728472

VL - 12

SP - L205-L210

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 11

ER -