Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Hsiang Lin Liu*, Chia Chun Chen, Chih Ta Chia, Chun Chia Yeh, Chun Ho Chen, Ming Yuan Yu, Stacia Keller, Steven P. Denbaars

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

151 Citations (Scopus)


Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

Original languageEnglish
Pages (from-to)245-251
Number of pages7
JournalChemical Physics Letters
Issue number3-4
Publication statusPublished - 2001 Sept 14

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


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