Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Hsiang Lin Liu; Chia Chun Chen; Chi-Ta Chia; Chun Chia Yeh; Chun Ho Chen; Ming Yuan Yu; Stacia Keller; Steven P. Denbaars

doi:10.1016/S0009-2614(01)00858-2

Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Hsiang Lin Liu, Chia Chun Chen, Chi-Ta Chia, Chun Chia Yeh, Chun Ho Chen, Ming Yuan Yu, Stacia Keller, Steven P. Denbaars

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143 Citations (Scopus)

Abstract

Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm^-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

Original language	English
Pages (from-to)	245-251
Number of pages	7
Journal	Chemical Physics Letters
Volume	345
Issue number	3-4
DOIs	https://doi.org/10.1016/S0009-2614(01)00858-2
Publication status	Published - 2001 Sep 14

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ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

Cite this

Liu, H. L., Chen, C. C., Chia, C-T., Yeh, C. C., Chen, C. H., Yu, M. Y., Keller, S., & Denbaars, S. P. (2001). Infrared and Raman-scattering studies in single-crystalline GaN nanowires. Chemical Physics Letters, 345(3-4), 245-251. https://doi.org/10.1016/S0009-2614(01)00858-2

@article{bacecf383ad64c2eb4a69f2ed79b5784,

title = "Infrared and Raman-scattering studies in single-crystalline GaN nanowires",

abstract = "Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.",

author = "Liu, {Hsiang Lin} and Chen, {Chia Chun} and Chi-Ta Chia and Yeh, {Chun Chia} and Chen, {Chun Ho} and Yu, {Ming Yuan} and Stacia Keller and Denbaars, {Steven P.}",

year = "2001",

month = sep

day = "14",

doi = "10.1016/S0009-2614(01)00858-2",

language = "English",

volume = "345",

pages = "245--251",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Infrared and Raman-scattering studies in single-crystalline GaN nanowires

AU - Liu, Hsiang Lin

AU - Chen, Chia Chun

AU - Chia, Chi-Ta

AU - Yeh, Chun Chia

AU - Chen, Chun Ho

AU - Yu, Ming Yuan

AU - Keller, Stacia

AU - Denbaars, Steven P.

PY - 2001/9/14

Y1 - 2001/9/14

N2 - Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

AB - Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

UR - http://www.scopus.com/inward/record.url?scp=0000893562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000893562&partnerID=8YFLogxK

U2 - 10.1016/S0009-2614(01)00858-2

DO - 10.1016/S0009-2614(01)00858-2

M3 - Article

AN - SCOPUS:0000893562

VL - 345

SP - 245

EP - 251

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

IS - 3-4

ER -

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10.1016/S0009-2614(01)00858-2