Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Hsiang Lin Liu; Chia Chun Chen; Chi-Ta Chia; Chun Chia Yeh; Chun Ho Chen; Ming Yuan Yu; Stacia Keller; Steven P. Denbaars

doi:10.1016/S0009-2614(01)00858-2

Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Hsiang Lin Liu^*, Chia Chun Chen, Chi-Ta Chia, Chun Chia Yeh, Chun Ho Chen, Ming Yuan Yu, Stacia Keller, Steven P. Denbaars

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

146 Citations (Scopus)

Abstract

Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm^-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

Original language	English
Pages (from-to)	245-251
Number of pages	7
Journal	Chemical Physics Letters
Volume	345
Issue number	3-4
DOIs	https://doi.org/10.1016/S0009-2614(01)00858-2
Publication status	Published - 2001 Sep 14

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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10.1016/S0009-2614(01)00858-2

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@article{bacecf383ad64c2eb4a69f2ed79b5784,

title = "Infrared and Raman-scattering studies in single-crystalline GaN nanowires",

abstract = "Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.",

author = "Liu, {Hsiang Lin} and Chen, {Chia Chun} and Chi-Ta Chia and Yeh, {Chun Chia} and Chen, {Chun Ho} and Yu, {Ming Yuan} and Stacia Keller and Denbaars, {Steven P.}",

note = "Funding Information: We acknowledge K.H. Chen, Y.F. Chen, and C.-K. Sun for helpful discussions, and we would also like to thank J.L. Musfeldt for the use of her infrared microscope system in portion of this work, and C.N. Chang for help on SEM measurements. One of us (H.L.L.) would like to gratefully acknowledge financial support from the National Science Council of Republic of China under Grant No. NSC 89-2112-M-003-036. Copyright: Copyright 2005 Elsevier B.V., All rights reserved.",

year = "2001",

month = sep,

day = "14",

doi = "10.1016/S0009-2614(01)00858-2",

language = "English",

volume = "345",

pages = "245--251",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier",

number = "3-4",

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TY - JOUR

T1 - Infrared and Raman-scattering studies in single-crystalline GaN nanowires

AU - Liu, Hsiang Lin

AU - Chen, Chia Chun

AU - Chia, Chi-Ta

AU - Yeh, Chun Chia

AU - Chen, Chun Ho

AU - Yu, Ming Yuan

AU - Keller, Stacia

AU - Denbaars, Steven P.

N1 - Funding Information: We acknowledge K.H. Chen, Y.F. Chen, and C.-K. Sun for helpful discussions, and we would also like to thank J.L. Musfeldt for the use of her infrared microscope system in portion of this work, and C.N. Chang for help on SEM measurements. One of us (H.L.L.) would like to gratefully acknowledge financial support from the National Science Council of Republic of China under Grant No. NSC 89-2112-M-003-036. Copyright: Copyright 2005 Elsevier B.V., All rights reserved.

PY - 2001/9/14

Y1 - 2001/9/14

N2 - Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

AB - Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

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DO - 10.1016/S0009-2614(01)00858-2

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EP - 251

JO - Chemical Physics Letters

JF - Chemical Physics Letters

SN - 0009-2614

IS - 3-4

ER -

Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Abstract

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