Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Hsiang Lin Liu, Chia Chun Chen, Chi-Ta Chia, Chun Chia Yeh, Chun Ho Chen, Ming Yuan Yu, Stacia Keller, Steven P. Denbaars

Research output: Contribution to journalArticle

141 Citations (Scopus)

Abstract

Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

Original languageEnglish
Pages (from-to)245-251
Number of pages7
JournalChemical Physics Letters
Volume345
Issue number3-4
DOIs
Publication statusPublished - 2001 Sep 14

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Nanowires
Raman scattering
nanowires
Raman spectra
Crystalline materials
Infrared radiation
Electron-phonon interactions
Phonons
electron phonon interactions
Electronic structure
purity
phonons
disorders
electronic structure
shift

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Infrared and Raman-scattering studies in single-crystalline GaN nanowires. / Liu, Hsiang Lin; Chen, Chia Chun; Chia, Chi-Ta; Yeh, Chun Chia; Chen, Chun Ho; Yu, Ming Yuan; Keller, Stacia; Denbaars, Steven P.

In: Chemical Physics Letters, Vol. 345, No. 3-4, 14.09.2001, p. 245-251.

Research output: Contribution to journalArticle

Liu, Hsiang Lin ; Chen, Chia Chun ; Chia, Chi-Ta ; Yeh, Chun Chia ; Chen, Chun Ho ; Yu, Ming Yuan ; Keller, Stacia ; Denbaars, Steven P. / Infrared and Raman-scattering studies in single-crystalline GaN nanowires. In: Chemical Physics Letters. 2001 ; Vol. 345, No. 3-4. pp. 245-251.
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