Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Hsiang Lin Liu; Chia Chun Chen; Chi-Ta Chia; Chun Chia Yeh; Chun Ho Chen; Ming Yuan Yu; Stacia Keller; Steven P. Denbaars

doi:10.1016/S0009-2614(01)00858-2

Infrared and Raman-scattering studies in single-crystalline GaN nanowires

Hsiang Lin Liu, Chia Chun Chen, Chi-Ta Chia, Chun Chia Yeh, Chun Ho Chen, Ming Yuan Yu, Stacia Keller, Steven P. Denbaars

Research output: Contribution to journal › Article › peer-review

144 Citations (Scopus)

Abstract

Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm^-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

Original language	English
Pages (from-to)	245-251
Number of pages	7
Journal	Chemical Physics Letters
Volume	345
Issue number	3-4
DOIs	https://doi.org/10.1016/S0009-2614(01)00858-2
Publication status	Published - 2001 Sep 14

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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title = "Infrared and Raman-scattering studies in single-crystalline GaN nanowires",

abstract = "Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.",

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AU - Liu, Hsiang Lin

AU - Chen, Chia Chun

AU - Chia, Chi-Ta

AU - Yeh, Chun Chia

AU - Chen, Chun Ho

AU - Yu, Ming Yuan

AU - Keller, Stacia

AU - Denbaars, Steven P.

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AB - Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.

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