Abstract
Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.
| Original language | English |
|---|---|
| Pages (from-to) | 245-251 |
| Number of pages | 7 |
| Journal | Chemical Physics Letters |
| Volume | 345 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - 2001 Sep 14 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry
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Liu, H. L., Chen, C. C., Chia, C-T., Yeh, C. C., Chen, C. H., Yu, M. Y., Keller, S., & Denbaars, S. P. (2001). Infrared and Raman-scattering studies in single-crystalline GaN nanowires. Chemical Physics Letters, 345(3-4), 245-251. https://doi.org/10.1016/S0009-2614(01)00858-2