Abstract
Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.
| Original language | English |
|---|---|
| Pages (from-to) | 245-251 |
| Number of pages | 7 |
| Journal | Chemical Physics Letters |
| Volume | 345 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - 2001 Sep 14 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry
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Infrared and Raman-scattering studies in single-crystalline GaN nanowires. / Liu, Hsiang Lin; Chen, Chia Chun; Chia, Chi-Ta; Yeh, Chun Chia; Chen, Chun Ho; Yu, Ming Yuan; Keller, Stacia; Denbaars, Steven P.
In: Chemical Physics Letters, Vol. 345, No. 3-4, 14.09.2001, p. 245-251.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Infrared and Raman-scattering studies in single-crystalline GaN nanowires
AU - Liu, Hsiang Lin
AU - Chen, Chia Chun
AU - Chia, Chi-Ta
AU - Yeh, Chun Chia
AU - Chen, Chun Ho
AU - Yu, Ming Yuan
AU - Keller, Stacia
AU - Denbaars, Steven P.
PY - 2001/9/14
Y1 - 2001/9/14
N2 - Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.
AB - Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ~254cm-1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron-phonon interaction in GaN nanowires.
UR - http://www.scopus.com/inward/record.url?scp=0000893562&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000893562&partnerID=8YFLogxK
U2 - 10.1016/S0009-2614(01)00858-2
DO - 10.1016/S0009-2614(01)00858-2
M3 - Article
AN - SCOPUS:0000893562
VL - 345
SP - 245
EP - 251
JO - Chemical Physics Letters
JF - Chemical Physics Letters
SN - 0009-2614
IS - 3-4
ER -