Influences of the interfacial state between Co and a Si substrate on the magnetic properties of Co/Si(1 1 1) films

Tsu-Yi Fu, Jyh-Shen Tsay, M. H. Lin, Y. D. Yao

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Morphology and magnetic properties of Co/Si(1 1 1) interfaces have been investigated using scanning tunneling microscope and surface magneto-optic Kerr effect techniques. As deposited at room temperature for Co/Si(1 1 1), defects have been observed with shapes of dark patches and bright islands on the surface with different Co coverage. The defect formation causes a rough interface. For subsequently deposited Co layers, the interfacial state between Co and the Si substrate results in the appearance of both the longitudinal and polar Kerr loops. After annealing treatments, interdiffusion of Co atoms and Si(1 1 1) substrate occurs as revealed by Auger electron spectroscopy. Scanning tunneling microscope images show the formation of Si clusters with average diameter of 10 nm at high temperatures. The disappearance of ferromagnetism of the films occurs due to the structural and compositional changes.

Original languageEnglish
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
Publication statusPublished - 2006 Sep 1

Fingerprint

Magnetic properties
Microscopes
microscopes
magnetic properties
Scanning
Magnetooptical effects
Defects
scanning
Ferromagnetism
defects
magneto-optics
Substrates
Auger electron spectroscopy
Kerr effects
ferromagnetism
Auger spectroscopy
electron spectroscopy
Annealing
Atoms
Temperature

Keywords

  • Cobalt
  • Morphology
  • Scanning tunneling microscope
  • Silicon
  • Surface magneto-optic Kerr effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "Influences of the interfacial state between Co and a Si substrate on the magnetic properties of Co/Si(1 1 1) films",
abstract = "Morphology and magnetic properties of Co/Si(1 1 1) interfaces have been investigated using scanning tunneling microscope and surface magneto-optic Kerr effect techniques. As deposited at room temperature for Co/Si(1 1 1), defects have been observed with shapes of dark patches and bright islands on the surface with different Co coverage. The defect formation causes a rough interface. For subsequently deposited Co layers, the interfacial state between Co and the Si substrate results in the appearance of both the longitudinal and polar Kerr loops. After annealing treatments, interdiffusion of Co atoms and Si(1 1 1) substrate occurs as revealed by Auger electron spectroscopy. Scanning tunneling microscope images show the formation of Si clusters with average diameter of 10 nm at high temperatures. The disappearance of ferromagnetism of the films occurs due to the structural and compositional changes.",
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T1 - Influences of the interfacial state between Co and a Si substrate on the magnetic properties of Co/Si(1 1 1) films

AU - Fu, Tsu-Yi

AU - Tsay, Jyh-Shen

AU - Lin, M. H.

AU - Yao, Y. D.

PY - 2006/9/1

Y1 - 2006/9/1

N2 - Morphology and magnetic properties of Co/Si(1 1 1) interfaces have been investigated using scanning tunneling microscope and surface magneto-optic Kerr effect techniques. As deposited at room temperature for Co/Si(1 1 1), defects have been observed with shapes of dark patches and bright islands on the surface with different Co coverage. The defect formation causes a rough interface. For subsequently deposited Co layers, the interfacial state between Co and the Si substrate results in the appearance of both the longitudinal and polar Kerr loops. After annealing treatments, interdiffusion of Co atoms and Si(1 1 1) substrate occurs as revealed by Auger electron spectroscopy. Scanning tunneling microscope images show the formation of Si clusters with average diameter of 10 nm at high temperatures. The disappearance of ferromagnetism of the films occurs due to the structural and compositional changes.

AB - Morphology and magnetic properties of Co/Si(1 1 1) interfaces have been investigated using scanning tunneling microscope and surface magneto-optic Kerr effect techniques. As deposited at room temperature for Co/Si(1 1 1), defects have been observed with shapes of dark patches and bright islands on the surface with different Co coverage. The defect formation causes a rough interface. For subsequently deposited Co layers, the interfacial state between Co and the Si substrate results in the appearance of both the longitudinal and polar Kerr loops. After annealing treatments, interdiffusion of Co atoms and Si(1 1 1) substrate occurs as revealed by Auger electron spectroscopy. Scanning tunneling microscope images show the formation of Si clusters with average diameter of 10 nm at high temperatures. The disappearance of ferromagnetism of the films occurs due to the structural and compositional changes.

KW - Cobalt

KW - Morphology

KW - Scanning tunneling microscope

KW - Silicon

KW - Surface magneto-optic Kerr effect

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