Influence of Y₂O₃Doped HfO₂High-k Films on Electrical Properties of MOS and MIM Devices

INIS

• films 100%
• devices 100%
• oxides 100%
• metals 100%
• electrical properties 100%
• semiconductor materials 100%
• doped materials 57%
• capacitance 57%
• yttrium oxides 57%
• voltage 42%
• leakage current 42%
• capacitors 42%
• density 28%
• annealing 28%
• nitrogen 28%
• current density 28%
• liquids 14%
• concentration 14%
• signals 14%
• deposition 14%
• substrates 14%
• hysteresis 14%
• low temperature 14%
• defects 14%
• integrated circuits 14%
• thin films 14%
• mhz range 14%
• radiowave radiation 14%
• mosfet 14%

Physics

• Insulators 100%
• Electrical Properties 100%
• Metal Oxide Semiconductor 100%
• Capacitance 100%
• Metal 100%
• Electric Potential 75%
• Capacitor 75%
• Nitrogen 50%
• Coefficients 25%
• Deposition 25%
• Frequencies 25%
• Temperature 25%
• Oxide 25%
• Annealing 25%
• Substrates 25%
• Thin Films 25%
• Field Effect Transistor 25%
• Hysteresis 25%
• Integrated Circuit 25%
• Liquid Phases 25%

Material Science

• Devices 100%
• Capacitance 100%
• Density 100%
• Electrical Property 100%
• Metal 100%
• Metal Oxide 100%
• Oxide Semiconductor 100%
• Capacitor 75%
• Temperature 25%
• Oxide 25%
• Film 25%
• Annealing 25%
• Metal-Oxide-Semiconductor Field-Effect Transistor 25%
• Thin Films 25%
• Electronic Circuit 25%
• Liquid Phase Deposition 25%