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Influence of plasma fluorination on p-type channel tin-oxide thin film transistors
Po Chun Chen
, Yu Chien Chiu
, Zhi Wei Zheng
*
,
Chun Hu Cheng
, Yung Hsien Wu
*
Corresponding author for this work
Department of Mechatronic Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
41
Citations (Scopus)
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INIS
plasma
100%
transistors
100%
thin films
100%
tin oxides
100%
fluorination
100%
fluorine
83%
devices
50%
performance
33%
layers
33%
resolution
16%
applications
16%
power
16%
mobility
16%
interfaces
16%
oxygen
16%
speed
16%
voltage
16%
vacancies
16%
low temperature
16%
tuning
16%
roughness
16%
traps
16%
Engineering
Thin film transistors
100%
Plasma Treatment
80%
Active Channel
60%
Channel Layer
40%
Current Ratio
20%
Low-Temperature
20%
Oxygen Interface
20%
Oxygen Vacancy
20%
High Resolution
20%
Interface Trap
20%
Material Science
Tin Oxide
100%
Thin-Film Transistor
100%
Oxygen Vacancy
20%