Influence of plasma fluorination on p-type channel tin-oxide thin film transistors

Po Chun Chen, Yu Chien Chiu, Zhi Wei Zheng*, Chun Hu Cheng, Yung Hsien Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)


This paper describes a high-performance p-type tin-oxide (SnO) thin film transistor (TFT) using fluorine plasma treatment on the SnO active channel layer. The influence of fluorine plasma treatment for this p-type SnO TFT device was also investigated. Through tuning the fluorine plasma power treated on the SnO active channel layer at low temperature, the optimal p-type SnO TFT device exhibits a very high on/off current ratio of 9.6 × 106, a field-effect mobility of 2.13 cm2 V−1 s−1, a very low subthreshold swing of 106 mV/dec and an extremely low off-state current of 1 pA at a low driven voltage of <3 V. These good characteristics can be attributed to fluorine plasma treatment on p-type SnO channel that reduced crystallized channel roughness and passivated oxygen vacancies and interface traps. This high-performance p-type SnO TFT device using fluorine plasma treatment on the active channel shows great promise for future high-resolution and high-speed display applications.

Original languageEnglish
Pages (from-to)162-166
Number of pages5
JournalJournal of Alloys and Compounds
Publication statusPublished - 2017


  • Plasma fluorination
  • Thin film transistor (TFT)
  • Tin-oxide (SnO)
  • p-type

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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