Influence of plasma fluorination on p-type channel tin-oxide thin film transistors

Po Chun Chen, Yu Chien Chiu, Zhi Wei Zheng, Chun-Hu Cheng, Yung Hsien Wu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This paper describes a high-performance p-type tin-oxide (SnO) thin film transistor (TFT) using fluorine plasma treatment on the SnO active channel layer. The influence of fluorine plasma treatment for this p-type SnO TFT device was also investigated. Through tuning the fluorine plasma power treated on the SnO active channel layer at low temperature, the optimal p-type SnO TFT device exhibits a very high on/off current ratio of 9.6 × 10 6 , a field-effect mobility of 2.13 cm 2  V −1  s −1 , a very low subthreshold swing of 106 mV/dec and an extremely low off-state current of 1 pA at a low driven voltage of <3 V. These good characteristics can be attributed to fluorine plasma treatment on p-type SnO channel that reduced crystallized channel roughness and passivated oxygen vacancies and interface traps. This high-performance p-type SnO TFT device using fluorine plasma treatment on the active channel shows great promise for future high-resolution and high-speed display applications.

Original languageEnglish
Pages (from-to)162-166
Number of pages5
JournalJournal of Alloys and Compounds
Volume707
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

Fluorination
Fluorine
Thin film transistors
Tin oxides
Oxide films
Plasmas
Oxygen vacancies
Tuning
Surface roughness
Display devices
stannic oxide
Electric potential

Keywords

  • Plasma fluorination
  • Thin film transistor (TFT)
  • Tin-oxide (SnO)
  • p-type

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Influence of plasma fluorination on p-type channel tin-oxide thin film transistors. / Chen, Po Chun; Chiu, Yu Chien; Zheng, Zhi Wei; Cheng, Chun-Hu; Wu, Yung Hsien.

In: Journal of Alloys and Compounds, Vol. 707, 01.01.2017, p. 162-166.

Research output: Contribution to journalArticle

Chen, Po Chun ; Chiu, Yu Chien ; Zheng, Zhi Wei ; Cheng, Chun-Hu ; Wu, Yung Hsien. / Influence of plasma fluorination on p-type channel tin-oxide thin film transistors. In: Journal of Alloys and Compounds. 2017 ; Vol. 707. pp. 162-166.
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