Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC

Kung Yen Lee, Yu Hao Chang, Yan Hao Huang, Shuen-De Wu, Cheng Yueh Chung, Chih Fang Huang, Tai Chou Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Wet and dry thermal oxidations on carbon (C)-face 4H-SiC samples were carried out at temperatures of 850 C, 900 C, 950 C, and 1000 C at different durations, followed by Ar anneals at the same temperature as the oxidations and NO anneals at 1175 C for different durations. The Fowler-Nordheim tunneling exhibits between 2 and 4 MV cm -1 , respectively, and then the breakdown occurs at around 6-8 MV cm -1 . The wet oxidation at 950 C provides the lowest interface trap density of 4-6 × 10 11 cm -2 eV -1 at 0.24 eV below the conduction band. Experiments also demonstrate that the oxide breakdown field for an N-implanted sample is lower than that of the non-implanted samples. However, the oxide breakdown field for an Al-implanted sample is even lower than that of the N-implanted sample, only 1.5 MV cm -1 , mainly due to damage caused by ion implantation.

Original languageEnglish
Pages (from-to)126-132
Number of pages7
JournalApplied Surface Science
Volume282
DOIs
Publication statusPublished - 2013 Oct 1

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Passivation
Nitrogen
Oxidation
Oxides
Conduction bands
Ion implantation
Field emission
Temperature
Carbon
Experiments

Keywords

  • 4H-SiC
  • Anneal
  • Interface trap density
  • Oxidation
  • Oxide breakdown field
  • Passivation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC. / Lee, Kung Yen; Chang, Yu Hao; Huang, Yan Hao; Wu, Shuen-De; Chung, Cheng Yueh; Huang, Chih Fang; Lee, Tai Chou.

In: Applied Surface Science, Vol. 282, 01.10.2013, p. 126-132.

Research output: Contribution to journalArticle

Lee, Kung Yen ; Chang, Yu Hao ; Huang, Yan Hao ; Wu, Shuen-De ; Chung, Cheng Yueh ; Huang, Chih Fang ; Lee, Tai Chou. / Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC. In: Applied Surface Science. 2013 ; Vol. 282. pp. 126-132.
@article{7573545679874b5b8267a5020f0bd101,
title = "Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC",
abstract = "Wet and dry thermal oxidations on carbon (C)-face 4H-SiC samples were carried out at temperatures of 850 C, 900 C, 950 C, and 1000 C at different durations, followed by Ar anneals at the same temperature as the oxidations and NO anneals at 1175 C for different durations. The Fowler-Nordheim tunneling exhibits between 2 and 4 MV cm -1 , respectively, and then the breakdown occurs at around 6-8 MV cm -1 . The wet oxidation at 950 C provides the lowest interface trap density of 4-6 × 10 11 cm -2 eV -1 at 0.24 eV below the conduction band. Experiments also demonstrate that the oxide breakdown field for an N-implanted sample is lower than that of the non-implanted samples. However, the oxide breakdown field for an Al-implanted sample is even lower than that of the N-implanted sample, only 1.5 MV cm -1 , mainly due to damage caused by ion implantation.",
keywords = "4H-SiC, Anneal, Interface trap density, Oxidation, Oxide breakdown field, Passivation",
author = "Lee, {Kung Yen} and Chang, {Yu Hao} and Huang, {Yan Hao} and Shuen-De Wu and Chung, {Cheng Yueh} and Huang, {Chih Fang} and Lee, {Tai Chou}",
year = "2013",
month = "10",
day = "1",
doi = "10.1016/j.apsusc.2013.05.080",
language = "English",
volume = "282",
pages = "126--132",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC

AU - Lee, Kung Yen

AU - Chang, Yu Hao

AU - Huang, Yan Hao

AU - Wu, Shuen-De

AU - Chung, Cheng Yueh

AU - Huang, Chih Fang

AU - Lee, Tai Chou

PY - 2013/10/1

Y1 - 2013/10/1

N2 - Wet and dry thermal oxidations on carbon (C)-face 4H-SiC samples were carried out at temperatures of 850 C, 900 C, 950 C, and 1000 C at different durations, followed by Ar anneals at the same temperature as the oxidations and NO anneals at 1175 C for different durations. The Fowler-Nordheim tunneling exhibits between 2 and 4 MV cm -1 , respectively, and then the breakdown occurs at around 6-8 MV cm -1 . The wet oxidation at 950 C provides the lowest interface trap density of 4-6 × 10 11 cm -2 eV -1 at 0.24 eV below the conduction band. Experiments also demonstrate that the oxide breakdown field for an N-implanted sample is lower than that of the non-implanted samples. However, the oxide breakdown field for an Al-implanted sample is even lower than that of the N-implanted sample, only 1.5 MV cm -1 , mainly due to damage caused by ion implantation.

AB - Wet and dry thermal oxidations on carbon (C)-face 4H-SiC samples were carried out at temperatures of 850 C, 900 C, 950 C, and 1000 C at different durations, followed by Ar anneals at the same temperature as the oxidations and NO anneals at 1175 C for different durations. The Fowler-Nordheim tunneling exhibits between 2 and 4 MV cm -1 , respectively, and then the breakdown occurs at around 6-8 MV cm -1 . The wet oxidation at 950 C provides the lowest interface trap density of 4-6 × 10 11 cm -2 eV -1 at 0.24 eV below the conduction band. Experiments also demonstrate that the oxide breakdown field for an N-implanted sample is lower than that of the non-implanted samples. However, the oxide breakdown field for an Al-implanted sample is even lower than that of the N-implanted sample, only 1.5 MV cm -1 , mainly due to damage caused by ion implantation.

KW - 4H-SiC

KW - Anneal

KW - Interface trap density

KW - Oxidation

KW - Oxide breakdown field

KW - Passivation

UR - http://www.scopus.com/inward/record.url?scp=84880927496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880927496&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2013.05.080

DO - 10.1016/j.apsusc.2013.05.080

M3 - Article

VL - 282

SP - 126

EP - 132

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -