Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC

Kung Yen Lee, Yu Hao Chang, Yan Hao Huang, Shuen De Wu, Cheng Yueh Chung, Chih Fang Huang, Tai Chou Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Wet and dry thermal oxidations on carbon (C)-face 4H-SiC samples were carried out at temperatures of 850 C, 900 C, 950 C, and 1000 C at different durations, followed by Ar anneals at the same temperature as the oxidations and NO anneals at 1175 C for different durations. The Fowler-Nordheim tunneling exhibits between 2 and 4 MV cm -1 , respectively, and then the breakdown occurs at around 6-8 MV cm -1 . The wet oxidation at 950 C provides the lowest interface trap density of 4-6 × 10 11 cm -2 eV -1 at 0.24 eV below the conduction band. Experiments also demonstrate that the oxide breakdown field for an N-implanted sample is lower than that of the non-implanted samples. However, the oxide breakdown field for an Al-implanted sample is even lower than that of the N-implanted sample, only 1.5 MV cm -1 , mainly due to damage caused by ion implantation.

Original languageEnglish
Pages (from-to)126-132
Number of pages7
JournalApplied Surface Science
Volume282
DOIs
Publication statusPublished - 2013 Oct 1

Keywords

  • 4H-SiC
  • Anneal
  • Interface trap density
  • Oxidation
  • Oxide breakdown field
  • Passivation

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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