Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures

Pi Chun Juan; Chih Wei Hsu; Chuan Hsi Liu; Ming Tsong Wang; Ling Yen Yeh

doi:10.1016/j.mee.2011.03.043

Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO₃)-insulator (CeO₂)- semiconductor nonvolatile memory structures

Pi Chun Juan^*, Chih Wei Hsu, Chuan Hsi Liu, Ming Tsong Wang, Ling Yen Yeh

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Metal-multiferroic (La-substituted BiFeO₃)-insulator (CeO ₂)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La³⁺ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature range from 500 to 700 °C, respectively. The microstructure and interfacial layer between CeO₂ and Si substrate were characterized by HRTEM. The memory windows as functions of insulator film thickness and DC power for La were measured. The maximum memory window is about 1.9 V under ±6 V applied voltage. The ferroelectric polarization increases with increasing substitution amount. The morphologies of La-substituted BiFeO₃ films were also studied by AFM.

Original language	English
Pages (from-to)	1217-1220
Number of pages	4
Journal	Microelectronic Engineering
Volume	88
Issue number	7
DOIs	https://doi.org/10.1016/j.mee.2011.03.043
Publication status	Published - 2011 Jul

Keywords

CeO
Memory window
Multiferroic BiFeO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2011.03.043

Cite this

@article{46e539be115c4badb60dcb48279feb58,

title = "Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures",

abstract = "Metal-multiferroic (La-substituted BiFeO3)-insulator (CeO 2)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La3+ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature range from 500 to 700 °C, respectively. The microstructure and interfacial layer between CeO2 and Si substrate were characterized by HRTEM. The memory windows as functions of insulator film thickness and DC power for La were measured. The maximum memory window is about 1.9 V under ±6 V applied voltage. The ferroelectric polarization increases with increasing substitution amount. The morphologies of La-substituted BiFeO3 films were also studied by AFM.",

keywords = "CeO, Memory window, Multiferroic BiFeO",

author = "Juan, {Pi Chun} and Hsu, {Chih Wei} and Liu, {Chuan Hsi} and Wang, {Ming Tsong} and Yeh, {Ling Yen}",

note = "Funding Information: This work is supported by National Science Council, Taiwan, Republic of China under Contract No. NSC 99-2221-E-131-022-MY2 .",

year = "2011",

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doi = "10.1016/j.mee.2011.03.043",

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volume = "88",

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journal = "Microelectronic Engineering",

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T1 - Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures

AU - Juan, Pi Chun

AU - Hsu, Chih Wei

AU - Liu, Chuan Hsi

AU - Wang, Ming Tsong

AU - Yeh, Ling Yen

N1 - Funding Information: This work is supported by National Science Council, Taiwan, Republic of China under Contract No. NSC 99-2221-E-131-022-MY2 .

PY - 2011/7

Y1 - 2011/7

N2 - Metal-multiferroic (La-substituted BiFeO3)-insulator (CeO 2)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La3+ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature range from 500 to 700 °C, respectively. The microstructure and interfacial layer between CeO2 and Si substrate were characterized by HRTEM. The memory windows as functions of insulator film thickness and DC power for La were measured. The maximum memory window is about 1.9 V under ±6 V applied voltage. The ferroelectric polarization increases with increasing substitution amount. The morphologies of La-substituted BiFeO3 films were also studied by AFM.

AB - Metal-multiferroic (La-substituted BiFeO3)-insulator (CeO 2)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La3+ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature range from 500 to 700 °C, respectively. The microstructure and interfacial layer between CeO2 and Si substrate were characterized by HRTEM. The memory windows as functions of insulator film thickness and DC power for La were measured. The maximum memory window is about 1.9 V under ±6 V applied voltage. The ferroelectric polarization increases with increasing substitution amount. The morphologies of La-substituted BiFeO3 films were also studied by AFM.

KW - CeO

KW - Memory window

KW - Multiferroic BiFeO

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