Influence of la substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (CeO2)- semiconductor nonvolatile memory structures

Pi Chun Juan, Chih Wei Hsu, Chuan Hsi Liu, Ming Tsong Wang, Ling Yen Yeh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Metal-multiferroic (La-substituted BiFeO3)-insulator (CeO 2)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La3+ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature range from 500 to 700 °C, respectively. The microstructure and interfacial layer between CeO2 and Si substrate were characterized by HRTEM. The memory windows as functions of insulator film thickness and DC power for La were measured. The maximum memory window is about 1.9 V under ±6 V applied voltage. The ferroelectric polarization increases with increasing substitution amount. The morphologies of La-substituted BiFeO3 films were also studied by AFM.

Original languageEnglish
Pages (from-to)1217-1220
Number of pages4
JournalMicroelectronic Engineering
Volume88
Issue number7
DOIs
Publication statusPublished - 2011 Jul 1

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Keywords

  • CeO
  • Memory window
  • Multiferroic BiFeO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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