Indium-based ternary barrier high-electron-mobility transistors on Si substrate with high ON/OFF ratio for power applications

P. G. Chen; M. Tang; M. H. Lee

doi:10.1109/LED.2015.2389611

Indium-based ternary barrier high-electron-mobility transistors on Si substrate with high ON/OFF ratio for power applications

P. G. Chen, M. Tang, M. H. Lee

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Indium-based ternary barrier high-electron-mobility transistors (HEMTs) directly on Si substrate is demonstrated in this letter with structure of In_0.18Al_0.82N/AlN/GaN-on-Si for high-power applications. The advantages of direct deposition on Si, compared with SiC or sapphire substrates, are high thermal dissipation and lower cost. The proposed InAlN barrier HEMTs exhibit a high ON/OFF ratio of ∼10⁷ and a steep subthreshold swing of 67 mV/dec. I_Dsat is measured to be 163 mA/mm, V_DS = 10 V, and V_G = 2 V with L_G = 2 μm. Material analysis using high-resolution X-ray diffraction and relaxation by reciprocal space mapping are also performed to confirm the indium barrier composition and epitaxy quality.

Original language	English
Article number	7005421
Pages (from-to)	259-261
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	3
DOIs	https://doi.org/10.1109/LED.2015.2389611
Publication status	Published - 2015 Mar 1

Keywords

InAlN
Ternary barrier
high electron mobility transistor (HEMT)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2015.2389611

Cite this

@article{3f450e6015f24d9ca266cf5a43de5d23,

title = "Indium-based ternary barrier high-electron-mobility transistors on Si substrate with high ON/OFF ratio for power applications",

abstract = "Indium-based ternary barrier high-electron-mobility transistors (HEMTs) directly on Si substrate is demonstrated in this letter with structure of In0.18Al0.82N/AlN/GaN-on-Si for high-power applications. The advantages of direct deposition on Si, compared with SiC or sapphire substrates, are high thermal dissipation and lower cost. The proposed InAlN barrier HEMTs exhibit a high ON/OFF ratio of ∼107 and a steep subthreshold swing of 67 mV/dec. IDsat is measured to be 163 mA/mm, VDS = 10 V, and VG = 2 V with LG = 2 μm. Material analysis using high-resolution X-ray diffraction and relaxation by reciprocal space mapping are also performed to confirm the indium barrier composition and epitaxy quality.",

keywords = "InAlN, Ternary barrier, high electron mobility transistor (HEMT)",

author = "Chen, {P. G.} and M. Tang and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2015",

month = mar,

day = "1",

doi = "10.1109/LED.2015.2389611",

language = "English",

volume = "36",

pages = "259--261",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Indium-based ternary barrier high-electron-mobility transistors on Si substrate with high ON/OFF ratio for power applications

AU - Chen, P. G.

AU - Tang, M.

AU - Lee, M. H.

PY - 2015/3/1

Y1 - 2015/3/1

N2 - Indium-based ternary barrier high-electron-mobility transistors (HEMTs) directly on Si substrate is demonstrated in this letter with structure of In0.18Al0.82N/AlN/GaN-on-Si for high-power applications. The advantages of direct deposition on Si, compared with SiC or sapphire substrates, are high thermal dissipation and lower cost. The proposed InAlN barrier HEMTs exhibit a high ON/OFF ratio of ∼107 and a steep subthreshold swing of 67 mV/dec. IDsat is measured to be 163 mA/mm, VDS = 10 V, and VG = 2 V with LG = 2 μm. Material analysis using high-resolution X-ray diffraction and relaxation by reciprocal space mapping are also performed to confirm the indium barrier composition and epitaxy quality.

AB - Indium-based ternary barrier high-electron-mobility transistors (HEMTs) directly on Si substrate is demonstrated in this letter with structure of In0.18Al0.82N/AlN/GaN-on-Si for high-power applications. The advantages of direct deposition on Si, compared with SiC or sapphire substrates, are high thermal dissipation and lower cost. The proposed InAlN barrier HEMTs exhibit a high ON/OFF ratio of ∼107 and a steep subthreshold swing of 67 mV/dec. IDsat is measured to be 163 mA/mm, VDS = 10 V, and VG = 2 V with LG = 2 μm. Material analysis using high-resolution X-ray diffraction and relaxation by reciprocal space mapping are also performed to confirm the indium barrier composition and epitaxy quality.

KW - InAlN

KW - Ternary barrier

KW - high electron mobility transistor (HEMT)

UR - http://www.scopus.com/inward/record.url?scp=84923648031&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923648031&partnerID=8YFLogxK

U2 - 10.1109/LED.2015.2389611

DO - 10.1109/LED.2015.2389611

M3 - Article

AN - SCOPUS:84923648031

SN - 0741-3106

VL - 36

SP - 259

EP - 261

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 7005421

ER -

Indium-based ternary barrier high-electron-mobility transistors on Si substrate with high ON/OFF ratio for power applications

Abstract

Keywords

ASJC Scopus subject areas

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