Abstract
Indium-based ternary barrier high-electron-mobility transistors (HEMTs) directly on Si substrate is demonstrated in this letter with structure of In0.18Al0.82N/AlN/GaN-on-Si for high-power applications. The advantages of direct deposition on Si, compared with SiC or sapphire substrates, are high thermal dissipation and lower cost. The proposed InAlN barrier HEMTs exhibit a high ON/OFF ratio of ∼107 and a steep subthreshold swing of 67 mV/dec. IDsat is measured to be 163 mA/mm, VDS = 10 V, and VG = 2 V with LG = 2 μm. Material analysis using high-resolution X-ray diffraction and relaxation by reciprocal space mapping are also performed to confirm the indium barrier composition and epitaxy quality.
Original language | English |
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Article number | 7005421 |
Pages (from-to) | 259-261 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 36 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2015 Mar 1 |
Keywords
- InAlN
- Ternary barrier
- high electron mobility transistor (HEMT)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering