Indium-based ternary barrier high-electron-mobility transistors on Si substrate with high ON/OFF ratio for power applications

P. G. Chen, M. Tang, Min-Hung Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Indium-based ternary barrier high-electron-mobility transistors (HEMTs) directly on Si substrate is demonstrated in this letter with structure of In0.18Al0.82N/AlN/GaN-on-Si for high-power applications. The advantages of direct deposition on Si, compared with SiC or sapphire substrates, are high thermal dissipation and lower cost. The proposed InAlN barrier HEMTs exhibit a high ON/OFF ratio of ∼107 and a steep subthreshold swing of 67 mV/dec. IDsat is measured to be 163 mA/mm, VDS = 10 V, and VG = 2 V with LG = 2 μm. Material analysis using high-resolution X-ray diffraction and relaxation by reciprocal space mapping are also performed to confirm the indium barrier composition and epitaxy quality.

Original languageEnglish
Article number7005421
Pages (from-to)259-261
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1

Keywords

  • InAlN
  • Ternary barrier
  • high electron mobility transistor (HEMT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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