Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

Y. J. Lee*, H. C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)


An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surface LED at an injection current of 20 mA, i.e., a significant improvement attributed to the ability of the roughened surface to not only reduce the internal reflection between the rear mirror system and the semiconductor-air interface, but also to effectively scatter the light outside the LED device.

Original languageEnglish
Pages (from-to)2289-2291
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number11
Publication statusPublished - 2005 Nov
Externally publishedYes


  • AlGaInP
  • Light-emitting diode (LED)
  • Surface roughening

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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