Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

Y. J. Lee; H. C. Kuo; S. C. Wang; T. C. Hsu; M. H. Hsieh; M. J. Jou; B. J. Lee

doi:10.1109/LPT.2005.858153

Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

Y. J. Lee^*, H. C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surface LED at an injection current of 20 mA, i.e., a significant improvement attributed to the ability of the roughened surface to not only reduce the internal reflection between the rear mirror system and the semiconductor-air interface, but also to effectively scatter the light outside the LED device.

Original language	English
Pages (from-to)	2289-2291
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2005.858153
Publication status	Published - 2005 Nov
Externally published	Yes

Keywords

AlGaInP
Light-emitting diode (LED)
Surface roughening

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2005.858153

Cite this

@article{42b6cb2013e44f3980d87bdfc3125eaa,

title = "Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening",

abstract = "An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surface LED at an injection current of 20 mA, i.e., a significant improvement attributed to the ability of the roughened surface to not only reduce the internal reflection between the rear mirror system and the semiconductor-air interface, but also to effectively scatter the light outside the LED device.",

keywords = "AlGaInP, Light-emitting diode (LED), Surface roughening",

author = "Lee, {Y. J.} and Kuo, {H. C.} and Wang, {S. C.} and Hsu, {T. C.} and Hsieh, {M. H.} and Jou, {M. J.} and Lee, {B. J.}",

note = "Funding Information: Manuscript received June 1, 2005; revised August 9, 2005. This work was supported in part by the National Science Council of Republic of China (R.O.C.) in Taiwan under Contract NSC 93-2120-M-009-006 and Contract NSC 93-2752-E-009-008-PAE.",

year = "2005",

month = nov,

doi = "10.1109/LPT.2005.858153",

language = "English",

volume = "17",

pages = "2289--2291",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

AU - Lee, Y. J.

AU - Kuo, H. C.

AU - Wang, S. C.

AU - Hsu, T. C.

AU - Hsieh, M. H.

AU - Jou, M. J.

AU - Lee, B. J.

N1 - Funding Information: Manuscript received June 1, 2005; revised August 9, 2005. This work was supported in part by the National Science Council of Republic of China (R.O.C.) in Taiwan under Contract NSC 93-2120-M-009-006 and Contract NSC 93-2752-E-009-008-PAE.

PY - 2005/11

Y1 - 2005/11

N2 - An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surface LED at an injection current of 20 mA, i.e., a significant improvement attributed to the ability of the roughened surface to not only reduce the internal reflection between the rear mirror system and the semiconductor-air interface, but also to effectively scatter the light outside the LED device.

AB - An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surface LED at an injection current of 20 mA, i.e., a significant improvement attributed to the ability of the roughened surface to not only reduce the internal reflection between the rear mirror system and the semiconductor-air interface, but also to effectively scatter the light outside the LED device.

KW - AlGaInP

KW - Light-emitting diode (LED)

KW - Surface roughening

UR - http://www.scopus.com/inward/record.url?scp=27744433386&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27744433386&partnerID=8YFLogxK

U2 - 10.1109/LPT.2005.858153

DO - 10.1109/LPT.2005.858153

M3 - Article

AN - SCOPUS:27744433386

SN - 1041-1135

VL - 17

SP - 2289

EP - 2291

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 11

ER -

Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this