Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

Y. J. Lee, H. C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee

    Research output: Contribution to journalArticlepeer-review

    58 Citations (Scopus)


    An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surface LED at an injection current of 20 mA, i.e., a significant improvement attributed to the ability of the roughened surface to not only reduce the internal reflection between the rear mirror system and the semiconductor-air interface, but also to effectively scatter the light outside the LED device.

    Original languageEnglish
    Pages (from-to)2289-2291
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Issue number11
    Publication statusPublished - 2005 Nov 1


    • AlGaInP
    • Light-emitting diode (LED)
    • Surface roughening

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

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