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InAsN grown by plasma-assisted gas source MBE
Ding Kang Shih
*
, Hao Hsiung Lin
, Tso Yu Chu
, T. R. Yang
*
Corresponding author for this work
Department of Physics
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INIS
gases
100%
plasma
100%
electrons
100%
alloys
100%
nitrogen
100%
effective mass
100%
mbe
100%
comparative evaluations
50%
prediction
50%
energy
50%
substrates
50%
absorption
50%
electrical properties
50%
molecular beam epitaxy
50%
optical properties
50%
indium phosphides
50%
reflectivity
50%
mosses
50%
indium arsenides
50%
Engineering
Electron Effective Mass
100%
Source Gas
100%
Absorption Edge
50%
Band Anticrossing Model
50%
Fundamental Absorption
50%
Reflectance
50%
Physics
Molecular Beam Epitaxy
100%
Electrical Property
50%
Optical Property
50%
Reflectance
50%
Material Science
Molecular Beam Epitaxy
100%
Optical Property
50%
Reflectivity
50%