InAsN grown by plasma-assisted gas source MBE

Ding Kang Shih*, Hao Hsiung Lin, Tso Yu Chu, T. R. Yang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy. It is found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed from infrared reflectivity and Hall measurement on these degenerate InAsN samples. The sizeable increase on electron effective mass is consistent with the theoretical predictions based on band-anticrossing model.

Original languageEnglish
Pages (from-to)61-66
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002
EventProgress in Semiconductor Materials for Optoelectronic Applications - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 29

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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