Abstract
We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy. It is found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed from infrared reflectivity and Hall measurement on these degenerate InAsN samples. The sizeable increase on electron effective mass is consistent with the theoretical predictions based on band-anticrossing model.
| Original language | English |
|---|---|
| Pages (from-to) | 61-66 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 692 |
| Publication status | Published - 2002 |
| Event | Progress in Semiconductor Materials for Optoelectronic Applications - Boston, MA, United States Duration: 2001 Nov 26 → 2001 Nov 29 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering