InAsN grown by plasma-assisted gas source MBE

Ding Kang Shih, Hao Hsiung Lin, Tso Yu Chu, T. R. Yang

Research output: Contribution to journalArticle

Abstract

We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy. It is found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed from infrared reflectivity and Hall measurement on these degenerate InAsN samples. The sizeable increase on electron effective mass is consistent with the theoretical predictions based on band-anticrossing model.

Original languageEnglish
Pages (from-to)61-66
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume692
Publication statusPublished - 2002
Externally publishedYes

Fingerprint

Plasma Gases
Molecular beam epitaxy
Nitrogen
Gas source molecular beam epitaxy
Plasmas
nitrogen
Bryophytes
Electrons
Gases
gases
Structural properties
Electric properties
electrons
molecular beam epitaxy
Optical properties
electrical properties
Infrared radiation
reflectance
optical properties
shift

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

InAsN grown by plasma-assisted gas source MBE. / Shih, Ding Kang; Lin, Hao Hsiung; Chu, Tso Yu; Yang, T. R.

In: Materials Research Society Symposium - Proceedings, Vol. 692, 2002, p. 61-66.

Research output: Contribution to journalArticle

Shih, Ding Kang ; Lin, Hao Hsiung ; Chu, Tso Yu ; Yang, T. R. / InAsN grown by plasma-assisted gas source MBE. In: Materials Research Society Symposium - Proceedings. 2002 ; Vol. 692. pp. 61-66.
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