In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact

P. G. Chen, M. Tang, M. H. Liao, M. H. Lee

Research output: Contribution to journalLetter

4 Citations (Scopus)

Abstract

Indium-based ternary-barrier high-electron-mobility transistors (HEMT) directly on Si substrate are demonstrated in this work, using a structure of In0.18Al0.82N/AlN/GaN-on-Si for high-power applications. The advantages of HEMTs on Si substrates are the low cost and high throughput, which are beneficial for large wafer scale. The thermal dissipation of Si occurs between SiC and the sapphire substrate. The proposed InAlN-barrier HEMTs exhibit a high ON/OFF ratio with >7 orders of magnitudes and an excellent subthreshold swing (SS) below 100 mV/dec, owing to high polarization and less lattice mismatch with GaN. The IDsat is measured to be 163 mA/mm at VDS = 10 V and VG = 2 V with LG = 2 μm. When compared with the control InAlN/AlN/GaN-on-Si MIS-HEMTs with Ohmic contacts, the OFF current is reduced by one order magnitude when using the Schottky-drain contact technology.

Original languageEnglish
Pages (from-to)206-209
Number of pages4
JournalSolid-State Electronics
Volume129
DOIs
Publication statusPublished - 2017 Mar 1

Fingerprint

Management information systems
MIS (semiconductors)
High electron mobility transistors
high electron mobility transistors
Substrates
Indium
Lattice mismatch
Ohmic contacts
Aluminum Oxide
Sapphire
indium
electric contacts
sapphire
dissipation
Throughput
wafers
Polarization
polarization
Costs

Keywords

  • High-electron-mobilitytransistor (HEMT)
  • InAlN
  • Ohmic
  • Schottky

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact. / Chen, P. G.; Tang, M.; Liao, M. H.; Lee, M. H.

In: Solid-State Electronics, Vol. 129, 01.03.2017, p. 206-209.

Research output: Contribution to journalLetter

Chen, P. G. ; Tang, M. ; Liao, M. H. ; Lee, M. H. / In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact. In: Solid-State Electronics. 2017 ; Vol. 129. pp. 206-209.
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AU - Chen, P. G.

AU - Tang, M.

AU - Liao, M. H.

AU - Lee, M. H.

PY - 2017/3/1

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AB - Indium-based ternary-barrier high-electron-mobility transistors (HEMT) directly on Si substrate are demonstrated in this work, using a structure of In0.18Al0.82N/AlN/GaN-on-Si for high-power applications. The advantages of HEMTs on Si substrates are the low cost and high throughput, which are beneficial for large wafer scale. The thermal dissipation of Si occurs between SiC and the sapphire substrate. The proposed InAlN-barrier HEMTs exhibit a high ON/OFF ratio with >7 orders of magnitudes and an excellent subthreshold swing (SS) below 100 mV/dec, owing to high polarization and less lattice mismatch with GaN. The IDsat is measured to be 163 mA/mm at VDS = 10 V and VG = 2 V with LG = 2 μm. When compared with the control InAlN/AlN/GaN-on-Si MIS-HEMTs with Ohmic contacts, the OFF current is reduced by one order magnitude when using the Schottky-drain contact technology.

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