In situ growth and flux pinning in Ag-doped YBa2Cu3O7-y thin films

H. C. Yang*, H. H. Sung, L. Lee, H. E. Horng, T. R. Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


We have grown in situ Ag-doped YBa2Cu3O7-y thin films by high-pressure magnetron sputtering using a stoichiometric target. The sputtering was carried out in a mixture of Ar (70%) and O2 (30%) at a pressure of 200 mTorr, with the substrate temperature kept at about 700°C during sputtering. We made a relatively high-pressure oxygen environment by employing an oxygen jet near the substrates. After deposition one atmosphere of O2 was introduced into the chamber, and the sample was cooled down to room temperature slowly (5°C/min). This method gives highly reproducible superconducting films with Tc (50%) at 8388 K and zero resistance at 7887 K depending on the growth conditions and the substrates used. In magnetic fields there is a narrowing of the resistive transition width for Y-Ba-Cu-O films with Ag impurities. We attribute the narrowing to the enhanced flux pinning due to the Ag impurities.

Original languageEnglish
Pages (from-to)8634-8637
Number of pages4
JournalPhysical Review B
Issue number10
Publication statusPublished - 1991

ASJC Scopus subject areas

  • Condensed Matter Physics


Dive into the research topics of 'In situ growth and flux pinning in Ag-doped YBa2Cu3O7-y thin films'. Together they form a unique fingerprint.

Cite this