In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

Meng Chen Tsai, Min-Hung Lee, Chin Lung Kuo, Hsin Chih Lin, Miin Jang Chen

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Amorphous and crystalline ZrO 2 gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J g ) of ∼7 × 10 −4  A/cm 2 with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO x N y in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO 2 from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J g of ∼1.4 × 10 −5  A/cm 2 as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO 2 gate dielectrics, and the nitrogen incorporation at the top of crystalline ZrO 2 is an effective approach to scale the CET and J g , as well as to improve the reliability.

    Original languageEnglish
    Pages (from-to)274-279
    Number of pages6
    JournalApplied Surface Science
    Volume387
    DOIs
    Publication statusPublished - 2016 Nov 30

    Fingerprint

    Nitridation
    Gate dielectrics
    Metallizing
    Crystalline materials
    Capacitance
    Annealing
    Nitrogen
    Leakage currents
    Permittivity
    Current density

    Keywords

    • Atomic layer deposition (ALD)
    • In situ
    • Metal oxide semiconductor (MOS)
    • NH3 plasma
    • Nitridation
    • Zirconium dioxide (ZrO2)

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films

    Cite this

    In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics. / Tsai, Meng Chen; Lee, Min-Hung; Kuo, Chin Lung; Lin, Hsin Chih; Chen, Miin Jang.

    In: Applied Surface Science, Vol. 387, 30.11.2016, p. 274-279.

    Research output: Contribution to journalArticle

    Tsai, Meng Chen ; Lee, Min-Hung ; Kuo, Chin Lung ; Lin, Hsin Chih ; Chen, Miin Jang. / In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics. In: Applied Surface Science. 2016 ; Vol. 387. pp. 274-279.
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    abstract = "Amorphous and crystalline ZrO 2 gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J g ) of ∼7 × 10 −4  A/cm 2 with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO x N y in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO 2 from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J g of ∼1.4 × 10 −5  A/cm 2 as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO 2 gate dielectrics, and the nitrogen incorporation at the top of crystalline ZrO 2 is an effective approach to scale the CET and J g , as well as to improve the reliability.",
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    AU - Kuo, Chin Lung

    AU - Lin, Hsin Chih

    AU - Chen, Miin Jang

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