Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun Yu Lin; Mei Lian Fan; Ming Dou Ker; Li Wei Chu; Jen Chou Tseng; Ming Hsiang Song

doi:10.1109/IRPS.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun Yu Lin, Mei Lian Fan, Ming Dou Ker, Li Wei Chu, Jen Chou Tseng, Ming Hsiang Song

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

Original language	English
Title of host publication	2014 IEEE International Reliability Physics Symposium, IRPS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	EL.1.1-EL.1.4
ISBN (Print)	9781479933167
DOIs	https://doi.org/10.1109/IRPS.2014.6861132
Publication status	Published - 2014
Event	52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States Duration: 2014 Jun 1 → 2014 Jun 5

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	52nd IEEE International Reliability Physics Symposium, IRPS 2014
Country/Territory	United States
City	Waikoloa, HI
Period	2014/06/01 → 2014/06/05

Keywords

Diode
electrostatic discharge (ESD)
radio-frequency (RF)
silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/IRPS.2014.6861132

Cite this

Lin, C. Y., Fan, M. L., Ker, M. D., Chu, L. W., Tseng, J. C., & Song, M. H. (2014). Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. In 2014 IEEE International Reliability Physics Symposium, IRPS 2014 (pp. EL.1.1-EL.1.4). Article 6861132 (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. / Lin, Chun Yu; Fan, Mei Lian; Ker, Ming Dou et al.
2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. EL.1.1-EL.1.4 6861132 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, CY, Fan, ML, Ker, MD, Chu, LW, Tseng, JC & Song, MH 2014, Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. in 2014 IEEE International Reliability Physics Symposium, IRPS 2014., 6861132, IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. EL.1.1-EL.1.4, 52nd IEEE International Reliability Physics Symposium, IRPS 2014, Waikoloa, HI, United States, 2014/06/01. https://doi.org/10.1109/IRPS.2014.6861132

Lin CY, Fan ML, Ker MD, Chu LW, Tseng JC, Song MH. Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. In 2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. EL.1.1-EL.1.4. 6861132. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2014.6861132

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abstract = "To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.",

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Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

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