Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun-Yu Lin; Mei Lian Fan; Ming Dou Ker; Li Wei Chu; Jen Chou Tseng; Ming Hsiang Song

doi:10.1109/IRPS.2014.6861132

Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun-Yu Lin, Mei Lian Fan, Ming Dou Ker, Li Wei Chu, Jen Chou Tseng, Ming Hsiang Song

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

Original language	English
Title of host publication	2014 IEEE International Reliability Physics Symposium, IRPS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479933167
DOIs	https://doi.org/10.1109/IRPS.2014.6861132
Publication status	Published - 2014 Jan 1
Event	52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States Duration: 2014 Jun 1 → 2014 Jun 5

Other

Other	52nd IEEE International Reliability Physics Symposium, IRPS 2014
Country/Territory	United States
City	Waikoloa, HI
Period	2014/06/01 → 2014/06/05

Keywords

Diode
electrostatic discharge (ESD)
radio-frequency (RF)
silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

Engineering(all)

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10.1109/IRPS.2014.6861132

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Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. / Lin, Chun-Yu; Fan, Mei Lian; Ker, Ming Dou; Chu, Li Wei; Tseng, Jen Chou; Song, Ming Hsiang.

2014 IEEE International Reliability Physics Symposium, IRPS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 6861132.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, C-Y, Fan, ML, Ker, MD, Chu, LW, Tseng, JC & Song, MH 2014, Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. in 2014 IEEE International Reliability Physics Symposium, IRPS 2014., 6861132, Institute of Electrical and Electronics Engineers Inc., 52nd IEEE International Reliability Physics Symposium, IRPS 2014, Waikoloa, HI, United States, 2014/06/01. https://doi.org/10.1109/IRPS.2014.6861132

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title = "Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS",

abstract = "To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.",

keywords = "Diode, electrostatic discharge (ESD), radio-frequency (RF), silicon-controlled rectifier (SCR)",

author = "Chun-Yu Lin and Fan, {Mei Lian} and Ker, {Ming Dou} and Chu, {Li Wei} and Tseng, {Jen Chou} and Song, {Ming Hsiang}",

year = "2014",

month = jan,

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doi = "10.1109/IRPS.2014.6861132",

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booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",

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AU - Lin, Chun-Yu

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AU - Tseng, Jen Chou

AU - Song, Ming Hsiang

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N2 - To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

AB - To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

KW - Diode

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KW - radio-frequency (RF)

KW - silicon-controlled rectifier (SCR)

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BT - 2014 IEEE International Reliability Physics Symposium, IRPS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 52nd IEEE International Reliability Physics Symposium, IRPS 2014

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Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Abstract

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Keywords

ASJC Scopus subject areas

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