Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun-Yu Lin, Mei Lian Fan, Ming Dou Ker, Li Wei Chu, Jen Chou Tseng, Ming Hsiang Song

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

Original languageEnglish
Title of host publication2014 IEEE International Reliability Physics Symposium, IRPS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479933167
DOIs
Publication statusPublished - 2014 Jan 1
Event52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States
Duration: 2014 Jun 12014 Jun 5

Other

Other52nd IEEE International Reliability Physics Symposium, IRPS 2014
CountryUnited States
CityWaikoloa, HI
Period2014/06/012014/06/05

Keywords

  • Diode
  • electrostatic discharge (ESD)
  • radio-frequency (RF)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Engineering(all)

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