Abstract
To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.
Original language | English |
---|---|
Title of host publication | 2014 IEEE International Reliability Physics Symposium, IRPS 2014 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Print) | 9781479933167 |
DOIs | |
Publication status | Published - 2014 Jan 1 |
Event | 52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States Duration: 2014 Jun 1 → 2014 Jun 5 |
Other
Other | 52nd IEEE International Reliability Physics Symposium, IRPS 2014 |
---|---|
Country | United States |
City | Waikoloa, HI |
Period | 2014/06/01 → 2014/06/05 |
Keywords
- Diode
- electrostatic discharge (ESD)
- radio-frequency (RF)
- silicon-controlled rectifier (SCR)
ASJC Scopus subject areas
- Engineering(all)