Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Chun-Yu Lin, Mei Lian Fan, Ming Dou Ker, Li Wei Chu, Jen Chou Tseng, Ming Hsiang Song

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

Original languageEnglish
Title of host publication2014 IEEE International Reliability Physics Symposium, IRPS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479933167
DOIs
Publication statusPublished - 2014 Jan 1
Event52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States
Duration: 2014 Jun 12014 Jun 5

Other

Other52nd IEEE International Reliability Physics Symposium, IRPS 2014
CountryUnited States
CityWaikoloa, HI
Period14/6/114/6/5

Keywords

  • Diode
  • electrostatic discharge (ESD)
  • radio-frequency (RF)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Lin, C-Y., Fan, M. L., Ker, M. D., Chu, L. W., Tseng, J. C., & Song, M. H. (2014). Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS. In 2014 IEEE International Reliability Physics Symposium, IRPS 2014 [6861132] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2014.6861132