Improving Edge Dead Domain and Endurance in Scaled HfZrOxFeRAM

Yu De Lin, Po Chun Yeh, Ying Tsan Tang, Jian Wei Su, Hsin Yun Yang, Yu Hao Chen, Chih Pin Lin, Po Shao Yeh, Jui Chin Chen, Pei Jer Tzeng, Min Hung Lee, Tuo Hung Hou*, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Scaling in area and voltage and its interplay with reliability of metal-ferroelectric-metal (MFM) capacitors are explored for scalable embedded FeRAM technology below 2× nm node. Size-dependent degradation in ferroelectricity due to the edge dead domains is identified both experimentally and theoretically. Optimization strategies including edge interface and work function tuning are detailed. The scaled MFM shows promising potential for achieving high maximum P_{rm{r}} (36 \mu rm{C}/\text{cm}{2}), small area (0.16 \mu rm{m}{2}), excellent reliability (> 10{11}) cycles; retention > 10 years at 85°C), a low operating voltage of 1.7 V, and a high array yield (100 % in lkb test macro).

Original languageEnglish
Title of host publication2021 IEEE International Electron Devices Meeting, IEDM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6.4.1-6.4.4
ISBN (Electronic)9781665425728
DOIs
Publication statusPublished - 2021
Event2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States
Duration: 2021 Dec 112021 Dec 16

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2021-December
ISSN (Print)0163-1918

Conference

Conference2021 IEEE International Electron Devices Meeting, IEDM 2021
Country/TerritoryUnited States
CitySan Francisco
Period2021/12/112021/12/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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