Improving Edge Dead Domain and Endurance in Scaled HfZrOxFeRAM

Yu De Lin; Po Chun Yeh; Ying Tsan Tang; Jian Wei Su; Hsin Yun Yang; Yu Hao Chen; Chih Pin Lin; Po Shao Yeh; Jui Chin Chen; Pei Jer Tzeng; Min Hung Lee; Tuo Hung Hou; Shyh Shyuan Sheu; Wei Chung Lo; Chih I. Wu

doi:10.1109/IEDM19574.2021.9720692

Improving Edge Dead Domain and Endurance in Scaled HfZrO_xFeRAM

Yu De Lin, Po Chun Yeh, Ying Tsan Tang, Jian Wei Su, Hsin Yun Yang, Yu Hao Chen, Chih Pin Lin, Po Shao Yeh, Jui Chin Chen, Pei Jer Tzeng, Min Hung Lee, Tuo Hung Hou^*, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

20 Citations (Scopus)

Abstract

Scaling in area and voltage and its interplay with reliability of metal-ferroelectric-metal (MFM) capacitors are explored for scalable embedded FeRAM technology below 2× nm node. Size-dependent degradation in ferroelectricity due to the edge dead domains is identified both experimentally and theoretically. Optimization strategies including edge interface and work function tuning are detailed. The scaled MFM shows promising potential for achieving high maximum P_{rm{r}} (36 \mu rm{C}/\text{cm}{2}), small area (0.16 \mu rm{m}{2}), excellent reliability (> 10{11}) cycles; retention > 10 years at 85°C), a low operating voltage of 1.7 V, and a high array yield (100 % in lkb test macro).

Original language	English
Title of host publication	2021 IEEE International Electron Devices Meeting, IEDM 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	6.4.1-6.4.4
ISBN (Electronic)	9781665425728
DOIs	https://doi.org/10.1109/IEDM19574.2021.9720692
Publication status	Published - 2021
Event	2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States Duration: 2021 Dec 11 → 2021 Dec 16

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2021-December
ISSN (Print)	0163-1918

Conference

Conference	2021 IEEE International Electron Devices Meeting, IEDM 2021
Country/Territory	United States
City	San Francisco
Period	2021/12/11 → 2021/12/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM19574.2021.9720692

Cite this

Lin, Y. D., Yeh, P. C., Tang, Y. T., Su, J. W., Yang, H. Y., Chen, Y. H., Lin, C. P., Yeh, P. S., Chen, J. C., Tzeng, P. J., Lee, M. H., Hou, T. H., Sheu, S. S., Lo, W. C., & Wu, C. I. (2021). Improving Edge Dead Domain and Endurance in Scaled HfZrO_xFeRAM. In 2021 IEEE International Electron Devices Meeting, IEDM 2021 (pp. 6.4.1-6.4.4). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2021-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19574.2021.9720692

Improving Edge Dead Domain and Endurance in Scaled HfZrO_xFeRAM. / Lin, Yu De; Yeh, Po Chun; Tang, Ying Tsan et al.
2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 6.4.1-6.4.4 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2021-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, YD, Yeh, PC, Tang, YT, Su, JW, Yang, HY, Chen, YH, Lin, CP, Yeh, PS, Chen, JC, Tzeng, PJ, Lee, MH, Hou, TH, Sheu, SS, Lo, WC & Wu, CI 2021, Improving Edge Dead Domain and Endurance in Scaled HfZrO_xFeRAM. in 2021 IEEE International Electron Devices Meeting, IEDM 2021. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2021-December, Institute of Electrical and Electronics Engineers Inc., pp. 6.4.1-6.4.4, 2021 IEEE International Electron Devices Meeting, IEDM 2021, San Francisco, United States, 2021/12/11. https://doi.org/10.1109/IEDM19574.2021.9720692

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abstract = "Scaling in area and voltage and its interplay with reliability of metal-ferroelectric-metal (MFM) capacitors are explored for scalable embedded FeRAM technology below 2× nm node. Size-dependent degradation in ferroelectricity due to the edge dead domains is identified both experimentally and theoretically. Optimization strategies including edge interface and work function tuning are detailed. The scaled MFM shows promising potential for achieving high maximum P_{rm{r}} (36 \mu rm{C}/\text{cm}{2}), small area (0.16 \mu rm{m}{2}), excellent reliability (> 10{11}) cycles; retention > 10 years at 85°C), a low operating voltage of 1.7 V, and a high array yield (100 % in lkb test macro).",

author = "Lin, {Yu De} and Yeh, {Po Chun} and Tang, {Ying Tsan} and Su, {Jian Wei} and Yang, {Hsin Yun} and Chen, {Yu Hao} and Lin, {Chih Pin} and Yeh, {Po Shao} and Chen, {Jui Chin} and Tzeng, {Pei Jer} and Lee, {Min Hung} and Hou, {Tuo Hung} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Wu, {Chih I.}",

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AU - Chen, Yu Hao

AU - Lin, Chih Pin

AU - Yeh, Po Shao

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AU - Tzeng, Pei Jer

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