Improvement on properties and reliability of ultra-thin silicon oxide (3-5 nm) grown by microwave plasma afterglow at the low temperatures using mixtures of N2O and O2

C. W. Leu, Shu-Fen Hu, P. C. Chen, H. L. Hwang

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Ultra-thin silicon oxides (4 nm) with excellent quality were grown by using mixture of N2O and O2 plasma in a microwave afterglow plasma oxidation system. The electrical breakdown fields of oxide grown with a mixture of N2O and O2 plasma are comparable with that of conventional thermally grown oxides. The interface state densities are lower and charge to breakdown are higher than that of oxide grown in traditional thermal furnace. The optimal interface state density (approx. 3 × 1010 cm-2 eV-1) could be achieved by tuning the N2O/O2 ratio. The oxides grown with a lower microwave power and a lower gas flow rate possess lower interface state density. Higher value of charge to breakdown could be found in oxides grown at low gas flow rate. Resistance to tunneling current stress increased as the ratio of N2O/O2 in plasma is higher. All these improvements could be attributed to the incorporation of nitrogen into oxides grown at lower temperatures in our novel system.

Original languageEnglish
Pages (from-to)322-326
Number of pages5
JournalApplied Surface Science
Volume142
Issue number1
DOIs
Publication statusPublished - 1999 Jan 1
EventProceedings of the 1998 9th International Conference on Solid Films and Surfaces, ICSFS-9 - Copenhagen, Denmark
Duration: 1998 Jul 61998 Jul 10

Fingerprint

Silicon oxides
Oxides
Microwaves
Interface states
Plasmas
Flow of gases
Temperature
Flow rate
Nitrogen oxides
Furnaces
Tuning
Oxidation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Improvement on properties and reliability of ultra-thin silicon oxide (3-5 nm) grown by microwave plasma afterglow at the low temperatures using mixtures of N2O and O2 . / Leu, C. W.; Hu, Shu-Fen; Chen, P. C.; Hwang, H. L.

In: Applied Surface Science, Vol. 142, No. 1, 01.01.1999, p. 322-326.

Research output: Contribution to journalConference article

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abstract = "Ultra-thin silicon oxides (4 nm) with excellent quality were grown by using mixture of N2O and O2 plasma in a microwave afterglow plasma oxidation system. The electrical breakdown fields of oxide grown with a mixture of N2O and O2 plasma are comparable with that of conventional thermally grown oxides. The interface state densities are lower and charge to breakdown are higher than that of oxide grown in traditional thermal furnace. The optimal interface state density (approx. 3 × 1010 cm-2 eV-1) could be achieved by tuning the N2O/O2 ratio. The oxides grown with a lower microwave power and a lower gas flow rate possess lower interface state density. Higher value of charge to breakdown could be found in oxides grown at low gas flow rate. Resistance to tunneling current stress increased as the ratio of N2O/O2 in plasma is higher. All these improvements could be attributed to the incorporation of nitrogen into oxides grown at lower temperatures in our novel system.",
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N2 - Ultra-thin silicon oxides (4 nm) with excellent quality were grown by using mixture of N2O and O2 plasma in a microwave afterglow plasma oxidation system. The electrical breakdown fields of oxide grown with a mixture of N2O and O2 plasma are comparable with that of conventional thermally grown oxides. The interface state densities are lower and charge to breakdown are higher than that of oxide grown in traditional thermal furnace. The optimal interface state density (approx. 3 × 1010 cm-2 eV-1) could be achieved by tuning the N2O/O2 ratio. The oxides grown with a lower microwave power and a lower gas flow rate possess lower interface state density. Higher value of charge to breakdown could be found in oxides grown at low gas flow rate. Resistance to tunneling current stress increased as the ratio of N2O/O2 in plasma is higher. All these improvements could be attributed to the incorporation of nitrogen into oxides grown at lower temperatures in our novel system.

AB - Ultra-thin silicon oxides (4 nm) with excellent quality were grown by using mixture of N2O and O2 plasma in a microwave afterglow plasma oxidation system. The electrical breakdown fields of oxide grown with a mixture of N2O and O2 plasma are comparable with that of conventional thermally grown oxides. The interface state densities are lower and charge to breakdown are higher than that of oxide grown in traditional thermal furnace. The optimal interface state density (approx. 3 × 1010 cm-2 eV-1) could be achieved by tuning the N2O/O2 ratio. The oxides grown with a lower microwave power and a lower gas flow rate possess lower interface state density. Higher value of charge to breakdown could be found in oxides grown at low gas flow rate. Resistance to tunneling current stress increased as the ratio of N2O/O2 in plasma is higher. All these improvements could be attributed to the incorporation of nitrogen into oxides grown at lower temperatures in our novel system.

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