Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode

K. T. Chen; C. Y. Liao; C. Lo; H. Y. Chen; G. Y. Siang; S. Liu; S. C. Chang; M. H. Liao; S. T. Chang; M. H. Lee

doi:10.1109/EDTM.2019.8731272

Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode

K. T. Chen, C. Y. Liao, C. Lo, H. Y. Chen, G. Y. Siang, S. Liu, S. C. Chang, M. H. Liao, S. T. Chang, M. H. Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

22 Citations (Scopus)

Abstract

The capping metal plays an important role on HfZrO² (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high remnant polarization and endurance as compared with TaN electrode. The optimized data retention for 500°C annealing device presents (>30) μC/cm² up to 2×10⁴ sec and slightly degradation extrapolated to 3×10⁸ sec (10 years). The Mo electrode exhibits higher 2P_r and excellent endurance performance ((>10)⁵ cycles) as compared with that of TaN electrode. It is beneficial for promising ultra-thin FE-HZO as the guidelines for low-power CMOS/memory applications.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	62-64
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731272
Publication status	Published - 2019 Mar
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 2019 Mar 12 → 2019 Mar 15

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	2019/03/12 → 2019/03/15

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Hardware and Architecture

Access to Document

10.1109/EDTM.2019.8731272

Cite this

Chen, K. T., Liao, C. Y., Lo, C., Chen, H. Y., Siang, G. Y., Liu, S., Chang, S. C., Liao, M. H., Chang, S. T., & Lee, M. H. (2019). Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 62-64). Article 8731272 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731272

Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode. / Chen, K. T.; Liao, C. Y.; Lo, C. et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 62-64 8731272 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, KT, Liao, CY, Lo, C, Chen, HY, Siang, GY, Liu, S, Chang, SC, Liao, MH, Chang, ST & Lee, MH 2019, Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731272, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 62-64, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 2019/03/12. https://doi.org/10.1109/EDTM.2019.8731272

Chen KT, Liao CY, Lo C, Chen HY, Siang GY, Liu S et al. Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 62-64. 8731272. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). doi: 10.1109/EDTM.2019.8731272

Chen, K. T. ; Liao, C. Y. ; Lo, C. et al. / Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 62-64 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

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title = "Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode",

abstract = "The capping metal plays an important role on HfZrO2 (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high remnant polarization and endurance as compared with TaN electrode. The optimized data retention for 500°C annealing device presents (>30) μC/cm2 up to 2×104 sec and slightly degradation extrapolated to 3×108 sec (10 years). The Mo electrode exhibits higher 2Pr and excellent endurance performance ((>10)5 cycles) as compared with that of TaN electrode. It is beneficial for promising ultra-thin FE-HZO as the guidelines for low-power CMOS/memory applications.",

author = "Chen, {K. T.} and Liao, {C. Y.} and C. Lo and Chen, {H. Y.} and Siang, {G. Y.} and S. Liu and Chang, {S. C.} and Liao, {M. H.} and Chang, {S. T.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731272",

language = "English",

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AU - Chen, H. Y.

AU - Siang, G. Y.

AU - Liu, S.

AU - Chang, S. C.

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AB - The capping metal plays an important role on HfZrO2 (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high remnant polarization and endurance as compared with TaN electrode. The optimized data retention for 500°C annealing device presents (>30) μC/cm2 up to 2×104 sec and slightly degradation extrapolated to 3×108 sec (10 years). The Mo electrode exhibits higher 2Pr and excellent endurance performance ((>10)5 cycles) as compared with that of TaN electrode. It is beneficial for promising ultra-thin FE-HZO as the guidelines for low-power CMOS/memory applications.

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