Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode

K. T. Chen, C. Y. Liao, C. Lo, H. Y. Chen, G. Y. Siang, S. Liu, S. C. Chang, M. H. Liao, S. T. Chang, M. H. Lee

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    5 Citations (Scopus)

    Abstract

    The capping metal plays an important role on HfZrO2 (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high remnant polarization and endurance as compared with TaN electrode. The optimized data retention for 500°C annealing device presents (>30) μC/cm2 up to 2×104 sec and slightly degradation extrapolated to 3×108 sec (10 years). The Mo electrode exhibits higher 2Pr and excellent endurance performance ((>10)5 cycles) as compared with that of TaN electrode. It is beneficial for promising ultra-thin FE-HZO as the guidelines for low-power CMOS/memory applications.

    Original languageEnglish
    Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages62-64
    Number of pages3
    ISBN (Electronic)9781538665084
    DOIs
    Publication statusPublished - 2019 Mar
    Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
    Duration: 2019 Mar 122019 Mar 15

    Publication series

    Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

    Conference

    Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
    CountrySingapore
    CitySingapore
    Period2019/03/122019/03/15

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Instrumentation
    • Hardware and Architecture

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