@article{357ec65c403146ad8319e52cd86b7ea3,
title = "Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode",
abstract = "We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 × 10-6 A/cm2 (at - 1 V) at a 28 fF/ μm2 capacitance density.",
keywords = "Highκ, Metal-insulator-metal (MIM), Plasma treatment, TiHfO",
author = "Cheng, {C. H.} and Pan, {H. C.} and Huang, {C. C.} and Chou, {C. P.} and Hsiao, {C. N.} and J. Hu and M. Hwang and T. Arikado and McAlister, {S. P.} and Albert Chin",
note = "Funding Information: Manuscript received March 5, 2008; revised May 22, 2008. Current version published September 24, 2008. The work at the National Chiao Tung University was supported by Tokyo Electron Ltd. The review of this letter was arranged by Editor A. Z. Wang. C. H. Cheng and C. P. Chou are with the Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C. H. C. Pan and C. N. Hsiao are with the Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan, R.O.C. C. C. Huang is with the Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C. J. Hu, M. Hwang, and T. Arikado are with Tokyo Electron Ltd., Tokyo 107-8481, Japan. S. P. McAlister is with the National Research Council of Canada, Ottawa, ON K1A 0R6, Canada. A. Chin is with the Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C., and also with the Nano-Electronics Consortium of Taiwan, Hsinchu 300, Taiwan, R.O.C. (e-mail: albert_achin@hotmail.com). Digital Object Identifier 10.1109/LED.2008.2000945 Fig. 1. (a) C–V and (b) J–V characteristics for TaN/TiHfO/TaN MIM capacitors measured after the indicated plasma treatments.",
year = "2008",
doi = "10.1109/LED.2008.2000945",
language = "English",
volume = "29",
pages = "1105--1107",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}