Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode

C. H. Cheng; H. C. Pan; C. C. Huang; C. P. Chou; C. N. Hsiao; J. Hu; M. Hwang; T. Arikado; S. P. McAlister; Albert Chin

doi:10.1109/LED.2008.2000945

Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode

C. H. Cheng, H. C. Pan, C. C. Huang, C. P. Chou, C. N. Hsiao, J. Hu, M. Hwang, T. Arikado, S. P. McAlister, Albert Chin

Department of Mechartronic Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 × 10^-6 A/cm² (at - 1 V) at a 28 fF/ μm² capacitance density.

Original language	English
Pages (from-to)	1105-1107
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	10
DOIs	https://doi.org/10.1109/LED.2008.2000945
Publication status	Published - 2008

Keywords

Highκ
Metal-insulator-metal (MIM)
Plasma treatment
TiHfO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2000945

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Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode. / Cheng, C. H.; Pan, H. C.; Huang, C. C.; Chou, C. P.; Hsiao, C. N.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.; Chin, Albert.

In: IEEE Electron Device Letters, Vol. 29, No. 10, 2008, p. 1105-1107.

Research output: Contribution to journal › Article › peer-review

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abstract = "We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 × 10-6 A/cm2 (at - 1 V) at a 28 fF/ μm2 capacitance density.",

keywords = "Highκ, Metal-insulator-metal (MIM), Plasma treatment, TiHfO",

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AU - Cheng, C. H.

AU - Pan, H. C.

AU - Huang, C. C.

AU - Chou, C. P.

AU - Hsiao, C. N.

AU - Hu, J.

AU - Hwang, M.

AU - Arikado, T.

AU - McAlister, S. P.

AU - Chin, Albert

PY - 2008

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AB - We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 × 10-6 A/cm2 (at - 1 V) at a 28 fF/ μm2 capacitance density.

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