Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode

C. H. Cheng, H. C. Pan, C. C. Huang, C. P. Chou, C. N. Hsiao, J. Hu, M. Hwang, T. Arikado, S. P. McAlister, Albert Chin

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 × 10-6 A/cm2 (at - 1 V) at a 28 fF/ μm2 capacitance density.

Original languageEnglish
Pages (from-to)1105-1107
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number10
DOIs
Publication statusPublished - 2008 Oct 9

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Capacitors
Metals
Nitrogen plasma
Plasmas
Electrodes
Leakage currents
Capacitance
Oxygen

Keywords

  • Highκ
  • Metal-insulator-metal (MIM)
  • Plasma treatment
  • TiHfO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode. / Cheng, C. H.; Pan, H. C.; Huang, C. C.; Chou, C. P.; Hsiao, C. N.; Hu, J.; Hwang, M.; Arikado, T.; McAlister, S. P.; Chin, Albert.

In: IEEE Electron Device Letters, Vol. 29, No. 10, 09.10.2008, p. 1105-1107.

Research output: Contribution to journal › Article

Cheng, CH, Pan, HC, Huang, CC, Chou, CP, Hsiao, CN, Hu, J, Hwang, M, Arikado, T, McAlister, SP & Chin, A 2008, 'Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode', IEEE Electron Device Letters, vol. 29, no. 10, pp. 1105-1107. https://doi.org/10.1109/LED.2008.2000945
Cheng CH, Pan HC, Huang CC, Chou CP, Hsiao CN, Hu J et al. Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode. IEEE Electron Device Letters. 2008 Oct 9;29(10):1105-1107. https://doi.org/10.1109/LED.2008.2000945
Cheng, C. H. ; Pan, H. C. ; Huang, C. C. ; Chou, C. P. ; Hsiao, C. N. ; Hu, J. ; Hwang, M. ; Arikado, T. ; McAlister, S. P. ; Chin, Albert. / Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 10. pp. 1105-1107.
@article{ece301b588824b1d9dc7aef335a92a04,
title = "Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode",
abstract = "We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 × 10-6 A/cm2 (at - 1 V) at a 28 fF/ μm2 capacitance density.",
keywords = "Highκ, Metal-insulator-metal (MIM), Plasma treatment, TiHfO",
author = "Cheng, {C. H.} and Pan, {H. C.} and Huang, {C. C.} and Chou, {C. P.} and Hsiao, {C. N.} and J. Hu and M. Hwang and T. Arikado and McAlister, {S. P.} and Albert Chin",
year = "2008",
month = "10",
day = "9",
doi = "10.1109/LED.2008.2000945",
language = "English",
volume = "29",
pages = "1105--1107",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode

AU - Cheng, C. H.

AU - Pan, H. C.

AU - Huang, C. C.

AU - Chou, C. P.

AU - Hsiao, C. N.

AU - Hu, J.

AU - Hwang, M.

AU - Arikado, T.

AU - McAlister, S. P.

AU - Chin, Albert

PY - 2008/10/9

Y1 - 2008/10/9

N2 - We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 × 10-6 A/cm2 (at - 1 V) at a 28 fF/ μm2 capacitance density.

AB - We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 × 10-6 A/cm2 (at - 1 V) at a 28 fF/ μm2 capacitance density.

KW - Highκ

KW - Metal-insulator-metal (MIM)

KW - Plasma treatment

KW - TiHfO

UR - http://www.scopus.com/inward/record.url?scp=54749148758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54749148758&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2000945

DO - 10.1109/LED.2008.2000945

M3 - Article

AN - SCOPUS:54749148758

VL - 29

SP - 1105

EP - 1107

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 10

ER -

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