Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode

C. H. Cheng, H. C. Pan, C. C. Huang, C. P. Chou, C. N. Hsiao, J. Hu, M. Hwang, T. Arikado, S. P. McAlister, Albert Chin

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We show that a conventional nitrogen plasma treatment is insufficient to suppress the formation of an interfacial layer at the bottom electrode of TiHfO metal-insulator-metal (MIM) capacitors. However, the capacitance density and leakage current of TaN/TiHfO/TaN MIM capacitors monotonically improve by exposing the lower TaN electrode to an additional oxygen plasma treatment. By performing dual oxygen and nitrogen plasma treatments on the lower electrode, the leakage current was 4.8 × 10-6 A/cm2 (at - 1 V) at a 28 fF/ μm2 capacitance density.

Original languageEnglish
Pages (from-to)1105-1107
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number10
DOIs
Publication statusPublished - 2008 Oct 9

Keywords

  • Highκ
  • Metal-insulator-metal (MIM)
  • Plasma treatment
  • TiHfO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Cheng, C. H., Pan, H. C., Huang, C. C., Chou, C. P., Hsiao, C. N., Hu, J., Hwang, M., Arikado, T., McAlister, S. P., & Chin, A. (2008). Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode. IEEE Electron Device Letters, 29(10), 1105-1107. https://doi.org/10.1109/LED.2008.2000945