Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment

Ya Ju Lee; Yi Ching Chen; Tien Chang Lu

doi:10.1088/0022-3727/44/22/224015

Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment

Ya Ju Lee^*, Yi Ching Chen, Tien Chang Lu

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The effects of pre-trimethlyindium (TMIn) flow on the improved electrical characteristics and highly stable temperature properties of InGaN green light-emitting diodes (LEDs) are discussed. For the LED sample with a pre-TMIn flow treatment, the tunnelling of injected carriers associated with threading defects is significantly reduced, which promotes the diffusion-recombination of injected carriers, as well as the overall emission efficiency of the LED. In addition, the pre-TMIn flow treatment evidently reduces the dependence of external quantum efficiency on temperature and efficiency droop of green LEDs. As a result, we conclude that the pre-TMIn flow treatment is a promising scheme for the improvement of output performance of InGaN-based green LEDs.

Original language	English
Article number	224015
Journal	Journal of Physics D: Applied Physics
Volume	44
Issue number	22
DOIs	https://doi.org/10.1088/0022-3727/44/22/224015
Publication status	Published - 2011 Jun 8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/44/22/224015

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title = "Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment",

abstract = "The effects of pre-trimethlyindium (TMIn) flow on the improved electrical characteristics and highly stable temperature properties of InGaN green light-emitting diodes (LEDs) are discussed. For the LED sample with a pre-TMIn flow treatment, the tunnelling of injected carriers associated with threading defects is significantly reduced, which promotes the diffusion-recombination of injected carriers, as well as the overall emission efficiency of the LED. In addition, the pre-TMIn flow treatment evidently reduces the dependence of external quantum efficiency on temperature and efficiency droop of green LEDs. As a result, we conclude that the pre-TMIn flow treatment is a promising scheme for the improvement of output performance of InGaN-based green LEDs.",

author = "Lee, {Ya Ju} and Chen, {Yi Ching} and Lu, {Tien Chang}",

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T1 - Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment

AU - Lee, Ya Ju

AU - Chen, Yi Ching

AU - Lu, Tien Chang

PY - 2011/6/8

Y1 - 2011/6/8

N2 - The effects of pre-trimethlyindium (TMIn) flow on the improved electrical characteristics and highly stable temperature properties of InGaN green light-emitting diodes (LEDs) are discussed. For the LED sample with a pre-TMIn flow treatment, the tunnelling of injected carriers associated with threading defects is significantly reduced, which promotes the diffusion-recombination of injected carriers, as well as the overall emission efficiency of the LED. In addition, the pre-TMIn flow treatment evidently reduces the dependence of external quantum efficiency on temperature and efficiency droop of green LEDs. As a result, we conclude that the pre-TMIn flow treatment is a promising scheme for the improvement of output performance of InGaN-based green LEDs.

AB - The effects of pre-trimethlyindium (TMIn) flow on the improved electrical characteristics and highly stable temperature properties of InGaN green light-emitting diodes (LEDs) are discussed. For the LED sample with a pre-TMIn flow treatment, the tunnelling of injected carriers associated with threading defects is significantly reduced, which promotes the diffusion-recombination of injected carriers, as well as the overall emission efficiency of the LED. In addition, the pre-TMIn flow treatment evidently reduces the dependence of external quantum efficiency on temperature and efficiency droop of green LEDs. As a result, we conclude that the pre-TMIn flow treatment is a promising scheme for the improvement of output performance of InGaN-based green LEDs.

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Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment

Abstract

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