Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment

Ya-Ju Lee, Yi Ching Chen, Tien Chang Lu

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    The effects of pre-trimethlyindium (TMIn) flow on the improved electrical characteristics and highly stable temperature properties of InGaN green light-emitting diodes (LEDs) are discussed. For the LED sample with a pre-TMIn flow treatment, the tunnelling of injected carriers associated with threading defects is significantly reduced, which promotes the diffusion-recombination of injected carriers, as well as the overall emission efficiency of the LED. In addition, the pre-TMIn flow treatment evidently reduces the dependence of external quantum efficiency on temperature and efficiency droop of green LEDs. As a result, we conclude that the pre-TMIn flow treatment is a promising scheme for the improvement of output performance of InGaN-based green LEDs.

    Original languageEnglish
    Article number224015
    JournalJournal of Physics D: Applied Physics
    Volume44
    Issue number22
    DOIs
    Publication statusPublished - 2011 Jun 8

    Fingerprint

    Quantum efficiency
    Light emitting diodes
    quantum efficiency
    light emitting diodes
    Temperature
    Defects
    temperature
    output
    defects

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Acoustics and Ultrasonics
    • Surfaces, Coatings and Films

    Cite this

    Improvement of quantum efficiency in green light-emitting diodes with pre-TMIn flow treatment. / Lee, Ya-Ju; Chen, Yi Ching; Lu, Tien Chang.

    In: Journal of Physics D: Applied Physics, Vol. 44, No. 22, 224015, 08.06.2011.

    Research output: Contribution to journalArticle

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