Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c

Hsiao Hsuan Hsu; Yu Chien Chiu; Ping Chiou; Chun Hu Cheng

doi:10.1016/j.jallcom.2014.12.061

Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c

Hsiao Hsuan Hsu, Yu Chien Chiu, Ping Chiou, Chun Hu Cheng^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiO_x/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm²/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

Original language	English
Pages (from-to)	S133-S136
Journal	Journal of Alloys and Compounds
Volume	643
Issue number	S1
DOIs	https://doi.org/10.1016/j.jallcom.2014.12.061
Publication status	Published - 2015 Jun 14

Keywords

Flexible electronics
InGaZnO
Thin film transistor
Titanium oxide

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2014.12.061

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Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c. / Hsu, Hsiao Hsuan; Chiu, Yu Chien; Chiou, Ping et al.
In: Journal of Alloys and Compounds, Vol. 643, No. S1, 14.06.2015, p. S133-S136.

Research output: Contribution to journal › Article › peer-review

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abstract = "In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.",

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AU - Hsu, Hsiao Hsuan

AU - Chiu, Yu Chien

AU - Chiou, Ping

AU - Cheng, Chun Hu

PY - 2015/6/14

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N2 - In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

AB - In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

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KW - InGaZnO

KW - Thin film transistor

KW - Titanium oxide

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Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c

Abstract

Keywords

ASJC Scopus subject areas

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