Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °c

Hsiao Hsuan Hsu, Yu Chien Chiu, Ping Chiou, Chun Hu Cheng

Research output: Contribution to journalArticle

11 Citations (Scopus)


In this works, we investigated a Ti-O material system integrating with InGaZnO thin film transistor. The Ti-O material system with high bond enthalpy can be functionalized by tuning the amount oxygen vacancies to reach the applicable requirements of gate dielectric and channel. Compared to control IGZO TFTs, the flexible TiOx/IGZO TFT reaches a smaller sub-threshold swing (SS) of 125 mV/decade and a higher field effect mobility of 61 cm2/V s at a very low operating voltage of 1.5 V. Besides, only slight performance degradation was found after bending test.

Original languageEnglish
Pages (from-to)S133-S136
JournalJournal of Alloys and Compounds
Issue numberS1
Publication statusPublished - 2015 Jun 14



  • Flexible electronics
  • InGaZnO
  • Thin film transistor
  • Titanium oxide

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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