Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

Y. J. Lee; T. C. Hsu; H. C. Kuo; S. C. Wang; Y. L. Yang; S. N. Yen; Y. T. Chu; Y. J. Shen; M. H. Hsieh; M. J. Jou; B. J. Lee

doi:10.1016/j.mseb.2005.05.019

Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

Y. J. Lee^*, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, B. J. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the 〈1 1̄ 0 0〉sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis.

Original language	English
Pages (from-to)	184-187
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	122
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2005.05.019
Publication status	Published - 2005 Sept 25
Externally published	Yes

Keywords

GaN
InGaN
Patterned sapphire substrate (PSS)

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2005.05.019

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@article{24252b0733ae487ba5e77824999d57eb,

title = "Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates",

abstract = "InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the 〈1 {\=1} 0 0〉sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis.",

keywords = "GaN, InGaN, Patterned sapphire substrate (PSS)",

author = "Lee, {Y. J.} and Hsu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.} and Yang, {Y. L.} and Yen, {S. N.} and Chu, {Y. T.} and Shen, {Y. J.} and Hsieh, {M. H.} and Jou, {M. J.} and Lee, {B. J.}",

year = "2005",

month = sep,

day = "25",

doi = "10.1016/j.mseb.2005.05.019",

language = "English",

volume = "122",

pages = "184--187",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "3",

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TY - JOUR

T1 - Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

AU - Lee, Y. J.

AU - Hsu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

AU - Yang, Y. L.

AU - Yen, S. N.

AU - Chu, Y. T.

AU - Shen, Y. J.

AU - Hsieh, M. H.

AU - Jou, M. J.

AU - Lee, B. J.

PY - 2005/9/25

Y1 - 2005/9/25

N2 - InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the 〈1 1̄ 0 0〉sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis.

AB - InGaN/GaN multi-quantum wells near ultraviolet light-emitting diodes (LEDs) were fabricated on a patterned sapphire substrate (PSS) with parallel stripe along the 〈1 1̄ 0 0〉sapphire direction by using low-pressure metal-organic chemical vapor deposition (MOCVD). The forward- and reverse-bias electrical characteristics of the stripe PSS LEDs are, respectively, similar and better than those of conventional LEDs on sapphire substrate. The output power of the epoxy package of stripe PSS LED was 20% higher than that of the conventional LEDs. The enhancement of output power is due not only to the reduction of dislocation density but also to the release of the guided light in LEDs by the geometric shape of the stripe PSS, according to the ray-tracing analysis.

KW - GaN

KW - InGaN

KW - Patterned sapphire substrate (PSS)

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U2 - 10.1016/j.mseb.2005.05.019

DO - 10.1016/j.mseb.2005.05.019

M3 - Article

AN - SCOPUS:24144457521

SN - 0921-5107

VL - 122

SP - 184

EP - 187

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 3

ER -

Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrates

Abstract

Keywords

ASJC Scopus subject areas

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