Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate

Y. J. Lee; T. G. Hsu; H. C. Kuo; S. C. Wang; Y. L. Yang; S. N. Yen; Y. T. Chu; Y. J. Shen; M. H. Hsieh; M. J. Jou; B. J. Lee

doi:10.1109/CLEOPR.2005.1569596

Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate

Y. J. Lee^*, T. G. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, B. J. Lee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20 % higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report.

Original language	English
Title of host publication	Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
Pages	904-905
Number of pages	2
DOIs	https://doi.org/10.1109/CLEOPR.2005.1569596
Publication status	Published - 2005
Externally published	Yes
Event	Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005 - Tokyo, Japan Duration: 2005 Jul 11 → 2005 Jul 15

Publication series

Name	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume	2005

Other

Other	Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
Country/Territory	Japan
City	Tokyo
Period	2005/07/11 → 2005/07/15

Keywords

LEDs
Near ultraviolet
Patterned sapphire substrate (PSS)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/CLEOPR.2005.1569596

Cite this

Lee, Y. J., Hsu, T. G., Kuo, H. C., Wang, S. C., Yang, Y. L., Yen, S. N., Chu, Y. T., Shen, Y. J., Hsieh, M. H., Jou, M. J., & Lee, B. J. (2005). Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005 (pp. 904-905). Article 1569596 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest; Vol. 2005). https://doi.org/10.1109/CLEOPR.2005.1569596

Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate. / Lee, Y. J.; Hsu, T. G.; Kuo, H. C. et al.
Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005. 2005. p. 904-905 1569596 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, YJ, Hsu, TG, Kuo, HC, Wang, SC, Yang, YL, Yen, SN, Chu, YT, Shen, YJ, Hsieh, MH, Jou, MJ & Lee, BJ 2005, Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate. in Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005., 1569596, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, vol. 2005, pp. 904-905, Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005, Tokyo, Japan, 2005/07/11. https://doi.org/10.1109/CLEOPR.2005.1569596

Lee YJ, Hsu TG, Kuo HC, Wang SC, Yang YL, Yen SN et al. Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005. 2005. p. 904-905. 1569596. (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). doi: 10.1109/CLEOPR.2005.1569596

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title = "Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate",

abstract = "The output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20 % higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report.",

keywords = "LEDs, Near ultraviolet, Patterned sapphire substrate (PSS)",

author = "Lee, {Y. J.} and Hsu, {T. G.} and Kuo, {H. C.} and Wang, {S. C.} and Yang, {Y. L.} and Yen, {S. N.} and Chu, {Y. T.} and Shen, {Y. J.} and Hsieh, {M. H.} and Jou, {M. J.} and Lee, {B. J.}",

year = "2005",

doi = "10.1109/CLEOPR.2005.1569596",

language = "English",

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series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

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AU - Hsu, T. G.

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AU - Wang, S. C.

AU - Yang, Y. L.

AU - Yen, S. N.

AU - Chu, Y. T.

AU - Shen, Y. J.

AU - Hsieh, M. H.

AU - Jou, M. J.

AU - Lee, B. J.

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AB - The output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20 % higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report.

KW - LEDs

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KW - Patterned sapphire substrate (PSS)

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ER -

Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate

Abstract

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Keywords

ASJC Scopus subject areas

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