Improvement in light-output efficiency of near-ultraviolet InGaN-GaN LEDs fabricated on stripe patterned sapphire substrate

Y. J. Lee, T. G. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, B. J. Lee

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    The output power of GaN-based near ultraviolet stripe patterned sapphire substrate (PSS) LEDs was 20 % higher than that of the conventional LEDs. The possible mechanism of this enhancement will be discussed in this report.

    Original languageEnglish
    Title of host publicationPacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
    Pages904-905
    Number of pages2
    DOIs
    Publication statusPublished - 2005 Dec 1
    EventPacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005 - Tokyo, Japan
    Duration: 2005 Jul 112005 Jul 15

    Publication series

    NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
    Volume2005

    Other

    OtherPacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2005
    CountryJapan
    CityTokyo
    Period2005/07/112005/07/15

    Keywords

    • LEDs
    • Near ultraviolet
    • Patterned sapphire substrate (PSS)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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