Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy

Y. J. Lee; H. C. Tseng; H. C. Kuo; S. C. Wang; C. W. Chang; T. C. Hsu; Y. L. Yang; M. H. Hsieh; M. J. Jou; B. J. Lee

doi:10.1109/LPT.2005.859147

Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy

Y. J. Lee^*, H. C. Tseng, H. C. Kuo, S. C. Wang, C. W. Chang, T. C. Hsu, Y. L. Yang, M. H. Hsieh, M. J. Jou, B. J. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Quaternary AlGaInP light-emitting diodes (LEDs) operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) were fabricated. It is demonstrated that the geometrical shape of stripe-patterned structure improves the light extraction efficiency by increasing the extraction of guided light. The optical and electrical characteristics of stripe-patterned ODR LEDs are presented and compared to typical ODR and distributed Bragg reflector (DBR) LEDs with the same epitaxial structure and emitting wavelength. It is shown that the output power of the stripe-patterned ODR LED exceeds that of the typical ODR and DBR LEDs by a factor of 1.15 and 2 times, respectively, and with an acceptable forward voltage of about 2.2 V.

Original language	English
Pages (from-to)	2532-2534
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2005.859147
Publication status	Published - 2005 Dec
Externally published	Yes

Keywords

AlGaInP
Light-emitting diode (LED)
Omni-directional reflector (ODR)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2005.859147

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@article{bf0f02476e204278a463e3a5b088162c,

title = "Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy",

abstract = "Quaternary AlGaInP light-emitting diodes (LEDs) operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) were fabricated. It is demonstrated that the geometrical shape of stripe-patterned structure improves the light extraction efficiency by increasing the extraction of guided light. The optical and electrical characteristics of stripe-patterned ODR LEDs are presented and compared to typical ODR and distributed Bragg reflector (DBR) LEDs with the same epitaxial structure and emitting wavelength. It is shown that the output power of the stripe-patterned ODR LED exceeds that of the typical ODR and DBR LEDs by a factor of 1.15 and 2 times, respectively, and with an acceptable forward voltage of about 2.2 V.",

keywords = "AlGaInP, Light-emitting diode (LED), Omni-directional reflector (ODR)",

author = "Lee, {Y. J.} and Tseng, {H. C.} and Kuo, {H. C.} and Wang, {S. C.} and Chang, {C. W.} and Hsu, {T. C.} and Yang, {Y. L.} and Hsieh, {M. H.} and Jou, {M. J.} and Lee, {B. J.}",

note = "Funding Information: Manuscript received April 27, 2005; revised August 10, 2005. This work was supported in part by the National Science Council of the Republic of China (R.O.C.) in Taiwan under Contract NSC 93-2120-M-009-006 and NSC 93-2752-E-009-008-PAE. Y. J. Lee, H. C. Kuo, and S. C. Wang are with the Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C. (e-mail: [email protected]). H. C. Tseng is with the Center for Measurement Standards, Industrial Technology Research Institute, Hinchu 300, Taiwan, R.O.C. C. W. Chang, T. C. Hsu, Y. L. Yang, M. H. Hsieh, M. J. Jou, and B. J. Lee are with the Epistar Corporation, Hsinchu 300, Taiwan, R.O.C. Digital Object Identifier 10.1109/LPT.2005.859147",

year = "2005",

month = dec,

doi = "10.1109/LPT.2005.859147",

language = "English",

volume = "17",

pages = "2532--2534",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy

AU - Lee, Y. J.

AU - Tseng, H. C.

AU - Kuo, H. C.

AU - Wang, S. C.

AU - Chang, C. W.

AU - Hsu, T. C.

AU - Yang, Y. L.

AU - Hsieh, M. H.

AU - Jou, M. J.

AU - Lee, B. J.

N1 - Funding Information: Manuscript received April 27, 2005; revised August 10, 2005. This work was supported in part by the National Science Council of the Republic of China (R.O.C.) in Taiwan under Contract NSC 93-2120-M-009-006 and NSC 93-2752-E-009-008-PAE. Y. J. Lee, H. C. Kuo, and S. C. Wang are with the Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C. (e-mail: [email protected]). H. C. Tseng is with the Center for Measurement Standards, Industrial Technology Research Institute, Hinchu 300, Taiwan, R.O.C. C. W. Chang, T. C. Hsu, Y. L. Yang, M. H. Hsieh, M. J. Jou, and B. J. Lee are with the Epistar Corporation, Hsinchu 300, Taiwan, R.O.C. Digital Object Identifier 10.1109/LPT.2005.859147

PY - 2005/12

Y1 - 2005/12

N2 - Quaternary AlGaInP light-emitting diodes (LEDs) operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) were fabricated. It is demonstrated that the geometrical shape of stripe-patterned structure improves the light extraction efficiency by increasing the extraction of guided light. The optical and electrical characteristics of stripe-patterned ODR LEDs are presented and compared to typical ODR and distributed Bragg reflector (DBR) LEDs with the same epitaxial structure and emitting wavelength. It is shown that the output power of the stripe-patterned ODR LED exceeds that of the typical ODR and DBR LEDs by a factor of 1.15 and 2 times, respectively, and with an acceptable forward voltage of about 2.2 V.

AB - Quaternary AlGaInP light-emitting diodes (LEDs) operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) were fabricated. It is demonstrated that the geometrical shape of stripe-patterned structure improves the light extraction efficiency by increasing the extraction of guided light. The optical and electrical characteristics of stripe-patterned ODR LEDs are presented and compared to typical ODR and distributed Bragg reflector (DBR) LEDs with the same epitaxial structure and emitting wavelength. It is shown that the output power of the stripe-patterned ODR LED exceeds that of the typical ODR and DBR LEDs by a factor of 1.15 and 2 times, respectively, and with an acceptable forward voltage of about 2.2 V.

KW - AlGaInP

KW - Light-emitting diode (LED)

KW - Omni-directional reflector (ODR)

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U2 - 10.1109/LPT.2005.859147

DO - 10.1109/LPT.2005.859147

M3 - Article

AN - SCOPUS:29244432757

SN - 1041-1135

VL - 17

SP - 2532

EP - 2534

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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