Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy

Y. J. Lee, H. C. Tseng, H. C. Kuo, S. C. Wang, C. W. Chang, T. C. Hsu, Y. L. Yang, M. H. Hsieh, M. J. Jou, B. J. Lee

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    16 Citations (Scopus)

    Abstract

    Quaternary AlGaInP light-emitting diodes (LEDs) operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) were fabricated. It is demonstrated that the geometrical shape of stripe-patterned structure improves the light extraction efficiency by increasing the extraction of guided light. The optical and electrical characteristics of stripe-patterned ODR LEDs are presented and compared to typical ODR and distributed Bragg reflector (DBR) LEDs with the same epitaxial structure and emitting wavelength. It is shown that the output power of the stripe-patterned ODR LED exceeds that of the typical ODR and DBR LEDs by a factor of 1.15 and 2 times, respectively, and with an acceptable forward voltage of about 2.2 V.

    Original languageEnglish
    Pages (from-to)2532-2534
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Volume17
    Issue number12
    DOIs
    Publication statusPublished - 2005 Dec 1

    Keywords

    • AlGaInP
    • Light-emitting diode (LED)
    • Omni-directional reflector (ODR)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

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