Improvement in electrical characteristics of HfO 2 gate dielectrics treated by remote NH 3 plasma

Li Tien Huang, Ming Lun Chang, Jhih Jie Huang, Hsin Chih Lin, Chin Lung Kuo, Min-Hung Lee, Chee Wee Liu, Miin Jang Chen

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    We report the structural and electrical characteristics of hafnium oxide (HfO 2 ) gate dielectrics treated by remote NH 3 plasma under various radio-frequency (RF) powers at a low temperature. Significant increase of effective dielectric constant (k eff ), decrease of capacitance equivalent thickness (CET), reduction in leakage current density, and suppression of the interfacial layer thickness were observed with the increase of the RF power in the remote NH 3 plasma treatment. The effects of hydrogen passivation and depassivation on the HfO 2 /Si interface due to the remote NH 3 plasma treatment were also observed by the variation of photoluminescence (PL) intensity, indicating that the PL measurement is applicable to probe the interfacial properties. An ultrathin interfacial layer (∼0.3 nm), a high k eff , (20.9), a low leakage current density (9 × 10 -6 A/cm 2 ), and a low CET (1.9 nm) in the nitrided HfO 2 film were achieved, demonstrating that the nitridation process using remote NH 3 plasma under a high RF power at a low temperature is a promising way to improve in electrical properties of high-K gate dielectrics.

    Original languageEnglish
    Pages (from-to)89-93
    Number of pages5
    JournalApplied Surface Science
    Volume266
    DOIs
    Publication statusPublished - 2013 Feb 1

    Fingerprint

    Gate dielectrics
    Plasmas
    Leakage currents
    Photoluminescence
    Capacitance
    Current density
    Hafnium oxides
    Nitridation
    Passivation
    Hydrogen
    Electric properties
    Permittivity
    Temperature

    Keywords

    • Atomic layer deposition
    • Hafnium oxide
    • Nitridation
    • Remote plasma

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films

    Cite this

    Improvement in electrical characteristics of HfO 2 gate dielectrics treated by remote NH 3 plasma . / Huang, Li Tien; Chang, Ming Lun; Huang, Jhih Jie; Lin, Hsin Chih; Kuo, Chin Lung; Lee, Min-Hung; Liu, Chee Wee; Chen, Miin Jang.

    In: Applied Surface Science, Vol. 266, 01.02.2013, p. 89-93.

    Research output: Contribution to journalArticle

    Huang, Li Tien ; Chang, Ming Lun ; Huang, Jhih Jie ; Lin, Hsin Chih ; Kuo, Chin Lung ; Lee, Min-Hung ; Liu, Chee Wee ; Chen, Miin Jang. / Improvement in electrical characteristics of HfO 2 gate dielectrics treated by remote NH 3 plasma In: Applied Surface Science. 2013 ; Vol. 266. pp. 89-93.
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