Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels

Chien Liu; Chun Hu Cheng; Ming Huei Lin; Yi Jia Shih; Yu Wen Hung; Chia Chi Fan; Hsuan Han Chen; Wan Hsin Chen; Chih Chieh Hsu; Bing Yang Shih; Yu Chien Chiu; Wu Ching Chou; Hsiao Hsuan Hsu; Chun Yen Chang

doi:10.1149/2.0061812jss

Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels

Chien Liu
, Chun Hu Cheng
, Ming Huei Lin
, Yi Jia Shih
, Yu Wen Hung
, Chia Chi Fan
, Hsuan Han Chen
, Wan Hsin Chen
, Chih Chieh Hsu
, Bing Yang Shih
, Yu Chien Chiu
, Wu Ching Chou
, Hsiao Hsuan Hsu
, Chun Yen Chang

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >10⁷ than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.

Original language	English
Pages (from-to)	Q242-Q245
Journal	ECS Journal of Solid State Science and Technology
Volume	7
Issue number	12
DOIs	https://doi.org/10.1149/2.0061812jss
Publication status	Published - 2018 Jan

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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Liu, C., Cheng, C. H., Lin, M. H., Shih, Y. J., Hung, Y. W., Fan, C. C., Chen, H. H., Chen, W. H., Hsu, C. C., Shih, B. Y., Chiu, Y. C., Chou, W. C., Hsu, H. H., & Chang, C. Y. (2018). Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels. ECS Journal of Solid State Science and Technology, 7(12), Q242-Q245. https://doi.org/10.1149/2.0061812jss

Liu, C, Cheng, CH, Lin, MH, Shih, YJ, Hung, YW, Fan, CC, Chen, HH, Chen, WH, Hsu, CC, Shih, BY, Chiu, YC, Chou, WC, Hsu, HH & Chang, CY 2018, 'Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels', ECS Journal of Solid State Science and Technology, vol. 7, no. 12, pp. Q242-Q245. https://doi.org/10.1149/2.0061812jss

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title = "Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels",

abstract = "In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >107 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.",

author = "Chien Liu and Cheng, \{Chun Hu\} and Lin, \{Ming Huei\} and Shih, \{Yi Jia\} and Hung, \{Yu Wen\} and Fan, \{Chia Chi\} and Chen, \{Hsuan Han\} and Chen, \{Wan Hsin\} and Hsu, \{Chih Chieh\} and Shih, \{Bing Yang\} and Chiu, \{Yu Chien\} and Chou, \{Wu Ching\} and Hsu, \{Hsiao Hsuan\} and Chang, \{Chun Yen\}",

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year = "2018",

month = jan,

doi = "10.1149/2.0061812jss",

language = "English",

volume = "7",

pages = "Q242--Q245",

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T1 - Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels

AU - Liu, Chien

AU - Cheng, Chun Hu

AU - Lin, Ming Huei

AU - Shih, Yi Jia

AU - Hung, Yu Wen

AU - Fan, Chia Chi

AU - Chen, Hsuan Han

AU - Chen, Wan Hsin

AU - Hsu, Chih Chieh

AU - Shih, Bing Yang

AU - Chiu, Yu Chien

AU - Chou, Wu Ching

AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

PY - 2018/1

Y1 - 2018/1

N2 - In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >107 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.

AB - In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >107 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.

UR - https://www.scopus.com/pages/publications/85078558782

UR - https://www.scopus.com/pages/publications/85078558782#tab=citedBy

U2 - 10.1149/2.0061812jss

DO - 10.1149/2.0061812jss

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AN - SCOPUS:85078558782

SN - 2162-8769

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SP - Q242-Q245

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 12

ER -

Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels

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