Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels

Chien Liu; Chun Hu Cheng; Ming Huei Lin; Yi Jia Shih; Yu Wen Hung; Chia Chi Fan; Hsuan Han Chen; Wan Hsin Chen; Chih Chieh Hsu; Bing Yang Shih; Yu Chien Chiu; Wu Ching Chou; Hsiao Hsuan Hsu; Chun Yen Chang

doi:10.1149/2.0061812jss

Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels

Chien Liu, Chun Hu Cheng, Ming Huei Lin, Yi Jia Shih, Yu Wen Hung, Chia Chi Fan, Hsuan Han Chen, Wan Hsin Chen, Chih Chieh Hsu, Bing Yang Shih, Yu Chien Chiu, Wu Ching Chou, Hsiao Hsuan Hsu, Chun Yen Chang

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >10⁷ than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.

Original language	English
Pages (from-to)	Q242-Q245
Journal	ECS Journal of Solid State Science and Technology
Volume	7
Issue number	12
DOIs	https://doi.org/10.1149/2.0061812jss
Publication status	Published - 2018 Jan

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1149/2.0061812jss

Cite this

Liu, C., Cheng, C. H., Lin, M. H., Shih, Y. J., Hung, Y. W., Fan, C. C., Chen, H. H., Chen, W. H., Hsu, C. C., Shih, B. Y., Chiu, Y. C., Chou, W. C., Hsu, H. H., & Chang, C. Y. (2018). Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels. ECS Journal of Solid State Science and Technology, 7(12), Q242-Q245. https://doi.org/10.1149/2.0061812jss

Liu, C, Cheng, CH, Lin, MH, Shih, YJ, Hung, YW, Fan, CC, Chen, HH, Chen, WH, Hsu, CC, Shih, BY, Chiu, YC, Chou, WC, Hsu, HH & Chang, CY 2018, 'Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels', ECS Journal of Solid State Science and Technology, vol. 7, no. 12, pp. Q242-Q245. https://doi.org/10.1149/2.0061812jss

@article{0512eb6af95a4da7be6722aa2922ac31,

title = "Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels",

abstract = "In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >107 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.",

author = "Chien Liu and Cheng, {Chun Hu} and Lin, {Ming Huei} and Shih, {Yi Jia} and Hung, {Yu Wen} and Fan, {Chia Chi} and Chen, {Hsuan Han} and Chen, {Wan Hsin} and Hsu, {Chih Chieh} and Shih, {Bing Yang} and Chiu, {Yu Chien} and Chou, {Wu Ching} and Hsu, {Hsiao Hsuan} and Chang, {Chun Yen}",

note = "Publisher Copyright: {\textcopyright} 2018 The Electrochemical Society.",

year = "2018",

month = jan,

doi = "10.1149/2.0061812jss",

language = "English",

volume = "7",

pages = "Q242--Q245",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "12",

}

TY - JOUR

T1 - Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels

AU - Liu, Chien

AU - Cheng, Chun Hu

AU - Lin, Ming Huei

AU - Shih, Yi Jia

AU - Hung, Yu Wen

AU - Fan, Chia Chi

AU - Chen, Hsuan Han

AU - Chen, Wan Hsin

AU - Hsu, Chih Chieh

AU - Shih, Bing Yang

AU - Chiu, Yu Chien

AU - Chou, Wu Ching

AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

PY - 2018/1

Y1 - 2018/1

N2 - In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >107 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.

AB - In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >107 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.

UR - http://www.scopus.com/inward/record.url?scp=85078558782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85078558782&partnerID=8YFLogxK

U2 - 10.1149/2.0061812jss

DO - 10.1149/2.0061812jss

M3 - Article

AN - SCOPUS:85078558782

SN - 2162-8769

VL - 7

SP - Q242-Q245

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 12

ER -

Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this