Improved thermal stability and stress immunity in highly scalable junctionless FETs using enhanced-depletion channels

Chien Liu, Chun Hu Cheng, Ming Huei Lin, Yi Jia Shih, Yu Wen Hung, Chia Chi Fan, Hsuan Han Chen, Wan Hsin Chen, Chih Chieh Hsu, Bing Yang Shih, Yu Chien Chiu, Wu Ching Chou, Hsiao Hsuan Hsu, Chun Yen Chang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >107 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.

Original languageEnglish
Pages (from-to)Q242-Q245
JournalECS Journal of Solid State Science and Technology
Volume7
Issue number12
DOIs
Publication statusPublished - 2018 Jan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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