In this work, we report a novel multi-PNPN-channel junctionless transistor with short channel length of 60nm. The multi-PNPN junctionless transistor exhibits the larger drive current of >1μA/μm, the steeper turn-on switching of 77 mV/decade, and the higher on/off current ratio of >107 than the hybrid PN channel device under the same gate overdrive. The improved performance is mainly attributed to the enhanced depletion effect of multi-PNPN channel to optimize the electric field modification of surface p-channel. The stronger immunity to constant-voltage stress is also obtained for multi-PNPN channel due to the lower lateral electric field near drain side to reduce the impact ionization ratio.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials