Improved stress reliability of analog TiHfO metal-insulator-metal capacitors using high-work-function electrode

  • Chun Hu Cheng*
  • , Kuo Cheng Chiang
  • , Han Chang Pan
  • , Chien Nan Hsiao
  • , Chang Pin Chou
  • , Sean P. Mcalister
  • , Albert Chin
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

We have studied the reliability of high-κ (κ ∼ 49) Ti xHf1-xO (x ∼ 0.67) metal-insulator-metal (MIM) capacitors after constant voltage stress induction. The use of a high-work-function Ni top electrode improves not only the leakage current, and temperature- and voltage-coefficients of capacitance, but also the long-term capacitance variation after stress induction.

Original languageEnglish
Pages (from-to)7300-7302
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number11
DOIs
Publication statusPublished - 2007 Nov 6
Externally publishedYes

Keywords

  • High work function
  • MIM
  • Ni
  • Reliability
  • TiHfO

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy

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