Improved stress reliability of analog TiHfO metal-insulator-metal capacitors using high-work-function electrode

Chun Hu Cheng, Kuo Cheng Chiang, Han Chang Pan, Chien Nan Hsiao, Chang Pin Chou, Sean P. Mcalister, Albert Chin

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We have studied the reliability of high-κ (κ ∼ 49) Ti xHf1-xO (x ∼ 0.67) metal-insulator-metal (MIM) capacitors after constant voltage stress induction. The use of a high-work-function Ni top electrode improves not only the leakage current, and temperature- and voltage-coefficients of capacitance, but also the long-term capacitance variation after stress induction.

Original languageEnglish
Pages (from-to)7300-7302
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number11
Publication statusPublished - 2007 Nov 6
Externally publishedYes



  • High work function
  • MIM
  • Ni
  • Reliability
  • TiHfO

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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